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Semiconductor Silicon Wafer

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Total 3057 products for semiconductor silicon wafer Manufacture & Suppliers

8 Inch Silicon Wafer FZ N Type Phosphorus Doped Orientation 111 Prime Grade 8"

..., PAM-XIAMEN offer semiconductor silicon substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

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8 Inch Silicon Wafer FZ P Type Phosphorus Doped Orientation 111 Prime Grade 8"

..., PAM-XIAMEN offer semiconductor silicon substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

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12 Inch Silicon Wafer FZ N Type Phosphorus Doped Orientation 100 Prime Grade 12"

..., PAM-XIAMEN offer semiconductor silicon substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

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8 Inch Silicon Wafer FZ P Type Phosphorus Doped Orientation 100 Prime Grade 8"

..., PAM-XIAMEN offer semiconductor silicon substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

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8 Inch Silicon Wafer FZ Intrinsic Undoped Orientation 100 Prime Grade 8"

..., PAM-XIAMEN offer semiconductor silicon substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

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12 Inch Silicon Wafer FZ P Type Phosphorus Doped Orientation 111 Prime Grade 12"

..., PAM-XIAMEN offer semiconductor silicon substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

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4 Inch Silicon Wafer CZ N Type Phosphorus Doped Orientation 111 Prime Grade 4"

..., PAM-XIAMEN offer semiconductor silicon substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

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3 Inch Silicon Wafer CZ N Type Phosphorus Doped Orientation 100 Prime Grade 3"

..., PAM-XIAMEN offer semiconductor silicon substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

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2 Inch Silicon Wafer CZ N Type Phosphorus Doped Orientation 111 Prime Grade 2"

..., PAM-XIAMEN offer semiconductor silicon substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

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12" Dummy Grade / Mechanical Grade Silicon Wafer DSP Thickness 650-700/700-750/750μm No Scratch Films Etch Patterns

... silicon substrate to compound semiconductor, PAM-XIAMEN offer semiconductor silicon substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon s...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

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6 Inch Silicon Wafer CZ N Type Antimony Doped Orientation 100 Ultra Thickness 290±20um Prime 6"

...Silicon Wafer CZ N Type Antimony Doped Orientation 100 Ultra Thickness 290±20um Prime 6" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon substrate to compound sem...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

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8 Inch Silicon Wafer CZ P Type Phosphorus Doped Orientation 100 Prime Grade 8"

..., PAM-XIAMEN offer semiconductor silicon substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

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6 Inch CZ Prime Silicon Wafer With One Side Sputtering Cr / Au Layer Thickness 10nm/50nm 6"

...Silicon Wafer With One Side Sputtering Cr / Au Layer Thickness 10nm/50nm 6" PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon substrate to compound semiconductor, P...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

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6 Inch Silicon Wafer CZ P Type Boron Doped Orientation 111 Prime Grade 6"

..., PAM-XIAMEN offer semiconductor silicon substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

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6 Inch Silicon Wafer CZ P Type Boron Doped Orientation 100 Prime Grade 6"

..., PAM-XIAMEN offer semiconductor silicon substrate with diameters from 1’’ (25.4 mm) to 12’’ (300 mm). We work either Cz (Czochralski) or FZ (Float Zone) silicon substrate. The polishing process is also made...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

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10x10mm Scanning Electron Microscope P type Silicon Wafer Square Piece SEM

...silicon wafer DSP SiO2 wafers Silicon oxide wafer 1inch 2inch 10x10mm Scanning electron microscope silicon wafer small square piece SEM Polished Silicon Wafer High-purity (11N) 1-12 inch single- and double-p...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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Silicon Wafer 4inch 8inch Single Side Double Side Polish 350um Thickness P Doped B Doped

... for semiconductor devices. Their exceptional electrical conductivity properties, which can be precisely modified through doping with elements like phosphorus or boron, make them ideal for fabricating integr...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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Silicon Carbide SiC Cantilever Paddle In Diffusion Coating Of Silicon Wafers Key Component Of Semiconductor

...Silicon carbide wafer boat is a wafer-growing device for wafers, which is made of silicon carbide materials.Wafer-growing device for wafers is the primary material in biology and semiconductor fields, whose ...

Wuxi Special Ceramic Electrical Co.,Ltd
Jiangsu,China

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IC Silicon Wafer Defects Free 0.28/0.35/0.5/0.525/0.625/0.7/0.725mm Flatness <50um

Product Description: IC Silicon Wafers are 8-inch diameter substrates used for semiconductor devices with a wide range of applications. It is made of high-purity silicon with various thicknesses of 0.28/ 0.35/ ...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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High Purity Silicon Wafer Conductivity Solar Cells Power Semiconductor Devices

Silicon wafer Conductivity Solar Cells Solar Cells Power Semiconductor Devices High Purity Product Description: Attributes Details Substrate Material Single Crystal Silicon Wafer Primary Flat Orientation +/-1 ...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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