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Total 5461 products for silicon carbide paste Manufacture & Suppliers

SIC Crystal Silicon Carbide Wafer

... 2inch 3inch 4inch 6inch 4h no doped wafer we can provides high quality single crystal SiC wafer ( Silicon Carbide ) to electronic and optoelectronic industry . SiC wafer is a next generation semiconductor m...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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4inch 6Inch 4H-N 500mm 350um SIC wafer Silicon Carbide sic Substrate Prime Dummy Grade

4inch 6Inch 4H-N 500mm 350um SIC wafer Silicon Carbide sic Substrate Prime Dummy Grade 6inch 4H-N 500mm 350um sic substrate wafer for powder device 6 inch diameter, Silicon Carbide (SiC) Substrate Specification...

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Shanghai,China

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2sp 4H-SEMI 4H-N SIC Silicon Carbide Wafer 10 X 10 X 0.5mm

... semiconductor performance, device manufacturers are looking to wide bandgap semiconductor materials, such as our 4H SiC Prime Grade of 4H n -type silicon carbide (SiC) wafers....

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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6H-N 4H-N SiC Substrates 2inch 0.33mm 0.43mm Silicon Carbide Wafer

10x10x0.5mm SiC 2sp 4H-SEMI 4H-N SIC Silicon Carbide Wafer 2inch 0.33mm 0.43mm 6H-N 4H-N SiC substrates Silicon Carbide sic Wafer High crystal quality for demanding power electronics As transportation, energy a...

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Shanghai,China

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8inch DSP 4H SiC Wafer Silicon Carbide Substrate Production Grade N Type For Experiment

... Brand Semiconductor Substrate SIC Silicon Carbide Wafer For Solar Photovoltaic, 8inch Silicon Carbide Substrate Production Grade N Type 4H SiC Wafer For Research And Experiment Wafer Dopings: Undoped Boron ...

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Shanghai,China

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customized 4H-N Type Semi-Insulating SiC Substrates 4inch 6inch Silicon Carbide Wafers

2inch Silicon Carbide Wafers 6H or 4H-N type or Semi-Insulating SiC Substrates 4H-N Type / Semi Insulating SiC Substrates 2inch 3inch 6inch Silicon Carbide Wafers What is a sic wafer A SiC wafer is a semiconduc...

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Shanghai,China

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SiC/Silicon Carbide Raw Material Grade A Can Be Cut Into Moissanite

SiC/Silicon carbide raw material grade A can be cut into Mosan drill Product description Moissanite is a mineral composed of silicon carbide. Often referred to as the gemstone from the stars, it was discovered ...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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2inch SIC Silicon Carbide Wafer 4H-N Type For MOS Device Dia 0.4mm

2inch SIC Silicon Carbide Wafer 4H-N Type For MOS Device Dia 0.4mm Product introduction The 4H n-type Silicon Carbide (SiC) single crystal substrate is a critical semiconductor material widely utilized in power...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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4Inch 4H-N Silicon Carbide SiC Substrate Dia 100mm N type Prime Grade Dummy Grade Thickness 350um Customized

SiC wafer, Silicon Carbide Wafer, SiC Substrate, Silicon Carbide Substrate, P Grade, D Grade, 2inch SiC, 4inch SiC, 6inch SiC, 8inch SiC, 12inch SiC, 4H-N, 4H-......

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Shanghai,China

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6Inch 4H-N Silicon Carbide SiC Substrate Dia 150mm Thickness 350um 500um N Type Prime Grade Dummy Grade

SiC wafer, Silicon Carbide Wafer, SiC Substrate, Silicon Carbide Substrate, P Grade, D Grade, 2inch SiC, 4inch SiC, 6inch SiC, 8inch SiC, 12inch SiC, 4H-N, 4H-......

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Shanghai,China

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2inch 4H-N Silicon Carbide SiC Substrate Thickness 350um 500um SiC wafer Prime Grade Dummy Grade

SiC wafer, Silicon Carbide Wafer, SiC Substrate, Silicon Carbide Substrate, P Grade, D Grade, 2inch SiC, 4inch SiC, 6inch SiC, 8inch SiC, 12inch SiC, 4H-N, 4H-......

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Shanghai,China

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4inch 3C N-type SiC Substrate Silicon Carbide Substrate Thick 350um Prime Grade Dummy Grade

3C SiC wafer, 3C Silicon Carbide Wafer, SiC Substrate, Silicon Carbide Substrate, Prime Grade, Dummy Grade, 4inch 3C N-type SiC, 4inch SiC, 6inch SiC, 8inch SiC, 12inch SiC, 3C-N 4H-N, 4H-SEMI, 6H-N, HPSI 4H-P ...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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SiC Ingot 6inch Ingot 4H-N SiC Prime Grade Dummy Grade Silicon Carbide Ingot High Hardness Ingot

SiC Ingot, Silicon Carbide Ingot, SiC raw Ingot, Silicon Carbide raw Ingot, P Grade, D Grade, 2inch SiC, 4inch SiC, 6inch SiC, 8inch SiC, 12inch SiC, 4H-N, 4H-SEMI, 6H-N, HPSI type About 4H-N SiC Ingot - suppor...

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Shanghai,China

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4H-P Silicon Carbide SiC Substrate 4 Inch SIC Wafer 6H-P For III-V Nitride Deposition

SiC Substrate, Silicon Carbide Substrate, SiC raw Substrate, Silicon Carbide raw Substrate, Prime Grade, Dummy Grade, 4H-P SiC Substrate, 6H-P SiC Substrate, 3C-N SiC 2inch SiC, 4inch SiC, 6inch SiC, 8inch SiC,...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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6H-P Silicon Carbide SiC Substrate 6 Inch SIC Wafer 4H-P For Optoelectronic Devices

SiC Substrate, Silicon Carbide Substrate, SiC raw Substrate, Silicon Carbide raw Substrate, Prime Grade, Dummy Grade, 4H-P SiC Substrate, 6H-P SiC Substrate, 3C-N SiC 2inch SiC, 4inch SiC, 6inch SiC, 8inch SiC,...

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Shanghai,China

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Sic Silicon Carbide Substrate 5.0*5.0mm Square 6H-P Type Thickness 350μm Zero Grade Dummy Grade

Product Description: Sic Silicon Carbide Substrate 5.0*5.0mm Square 6H-P Type Thickness 350��m Zero Grade Dummy Grade 6H-SiC (Hexagonal Silicon Carbide) is a wide bandgap semiconductor material with good thermal...

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Shanghai,China

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6Inch Sic Silicon Carbide Substrate 6H-P Type For Communications And Radar Systems Diameter 150mm Prime Grade

Product Description: 6Inch Sic Silicon Carbide Substrate 6H-P Type For Communications and radar systems Diameter 150mm Prime Grade 6H-SiC (Hexagonal Silicon Carbide) is a wide bandgap semiconductor material wit...

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Shanghai,China

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Silicon Carbide SIC Wafer 10*10 mm 6H-P Thickness 350μm For High-power Devices

Product Description: Silicon Carbide SIC Wafer 10*10 mm 6H-P Thickness 350��m For High-power Devices 6H-SiC (Hexagonal Silicon Carbide) is a wide bandgap semiconductor material with good thermal conductivity and...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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Silicon Carbide Paste

Total 5461 products for silicon carbide paste Manufacture & Suppliers

SIC Crystal Silicon Carbide Wafer

4inch 6Inch 4H-N 500mm 350um SIC wafer Silicon Carbide sic Substrate Prime Dummy Grade

2sp 4H-SEMI 4H-N SIC Silicon Carbide Wafer 10 X 10 X 0.5mm

6H-N 4H-N SiC Substrates 2inch 0.33mm 0.43mm Silicon Carbide Wafer

8inch DSP 4H SiC Wafer Silicon Carbide Substrate Production Grade N Type For Experiment

customized 4H-N Type Semi-Insulating SiC Substrates 4inch 6inch Silicon Carbide Wafers

SiC/Silicon Carbide Raw Material Grade A Can Be Cut Into Moissanite

2inch SIC Silicon Carbide Wafer 4H-N Type For MOS Device Dia 0.4mm

4Inch 4H-N Silicon Carbide SiC Substrate Dia 100mm N type Prime Grade Dummy Grade Thickness 350um Customized

6Inch 4H-N Silicon Carbide SiC Substrate Dia 150mm Thickness 350um 500um N Type Prime Grade Dummy Grade

2inch 4H-N Silicon Carbide SiC Substrate Thickness 350um 500um SiC wafer Prime Grade Dummy Grade

4inch 3C N-type SiC Substrate Silicon Carbide Substrate Thick 350um Prime Grade Dummy Grade

SiC Ingot 6inch Ingot 4H-N SiC Prime Grade Dummy Grade Silicon Carbide Ingot High Hardness Ingot

4H-P Silicon Carbide SiC Substrate 4 Inch SIC Wafer 6H-P For III-V Nitride Deposition

6H-P Silicon Carbide SiC Substrate 6 Inch SIC Wafer 4H-P For Optoelectronic Devices

Sic Silicon Carbide Substrate 5.0*5.0mm Square 6H-P Type Thickness 350μm Zero Grade Dummy Grade

6Inch Sic Silicon Carbide Substrate 6H-P Type For Communications And Radar Systems Diameter 150mm Prime Grade

Silicon Carbide SIC Wafer 10*10 mm 6H-P Thickness 350μm For High-power Devices