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Silicon Carbide Power Electronics

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Total 69640 products for silicon carbide power electronics Manufacture & Suppliers

Modules MSC130SM120JCU3 Full Silicon Carbide Power Module 1200V 173A N-Channel

...Silicon Carbide Power Module 1200V 173A N-Channel Product Description Of MSC130SM120JCU3 MSC130SM120JCU3 is Buck Chopper SiC MOSFET Power Module,1200 V, 173 A full Silicon Carbide power module. Specificatio...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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1200V MOSFET SCTWA50N120 N-Channel Silicon Carbide Power MOSFET Through Hole HiP247

...Silicon Carbide Power MOSFET Through Hole HiP247 Product Description Of SCTWA50N120 SCTWA50N120 Silicon carbide Power MOSFET 1200 V, 65 A, 59 mΩ (typ., TJ=150 °C) in an HiP247™ long leads package. Specificat...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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1200V 20A High Surge Silicon Carbide Power Schottky Diode DO-247 Package STPSC20H12WL

...manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky ......

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Integrated Circuit Chip SCTWA35N65G2V Silicon carbide Power MOSFET Transistors

Integrated Circuit Chip SCTWA35N65G2V Silicon carbide Power MOSFET Transistors Product Description Of SCTWA35N65G2V SCTWA35N65G2V is Silicon carbide Power MOSFET 650 V, 55 mOhm 45 A in an TO-247 long leads pack...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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N-Channel NTH4L040N120SC1 Silicon Carbide Power MOSFET Transistors TO-247-4L

N-Channel NTH4L040N120SC1 Silicon Carbide Power MOSFET Transistors TO-247-4L Product Description Of NTH4L040N120SC1 NTH4L040N120SC1 is 1200V 58A(Tc) 319W (Tc) N-Channel Silicon Carbide Power MOSFET Transistors...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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SCTW90N65G2V N-Channel 650V 90A 390W Silicon carbide Power MOSFET Transistors

SCTW90N65G2V N-Channel 650V 90A 390W Silicon carbide Power MOSFET Transistors Product Description Of SCTW90N65G2V SCTW90N65G2V is Silicon carbide Power MOSFET 650 V, 119 A, 18 mΩ in an TO-247-3 package. Specifi...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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IC Chip SCTL35N65G2V 650V 40A Silicon carbide Power MOSFET Transistors

...Silicon carbide Power MOSFET Transistors Product Description Of SCTL35N65G2V SCTL35N65G2V device reduces internal capacitances and gate charges for faster and more efficient switching. Specification Of SCTL3...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Integrated Circuit Chip SCTWA60N120G2-4 Silicon carbide Power MOSFET Transistors

Integrated Circuit Chip SCTWA60N120G2-4 Silicon carbide Power MOSFET Transistors Product Description Of SCTWA60N120G2-4 SCTWA60N120G2-4 N-Channel Power MOSFET is a very high voltage N-channel Power MOSFET desig...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Silicon Carbide Power MOSFET SCT040HU65G3AG SIC Integrated Circuit Chip HU3PAK IC Chip

Silicon Carbide Power MOSFET SCT040HU65G3AG SIC Integrated Circuit Chip HU3PAK IC Chip Product Description Of SCT040HU65G3AG SCT040HU65G3AG improve application performance in frequency, energy efficiency, syst...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Automotive IGBT Modules MSCSM70AM025CD3AG Silicon Carbide power module Transistors

Automotive IGBT Modules MSCSM70AM025CD3AG Silicon Carbide power module Transistors Product Description Of MSCSM70AM025CD3AG MSCSM70AM025CD3AG e is a phase leg 1200 V/55 A full SiC power module.Features high blo...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Integrated Circuit Chip MSC040SMA120B Silicon Carbide Power MOSFET Transistors

... Charge (Qg) (Max) @ Vgs 137 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds 1990 pF @ 1000 V Power Dissipation (Max) 323W (Tc) Benefits Of...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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1200 volt 254 amp silicon carbide power module MSCSM120SKM11CT3AG for buck chopper power conversion

...Power Module The MSCSM120SKM11CT3AG is a 1200 V/254 A full Silicon Carbide (SiC) power module designed for buck chopper applications. It offers high efficiency, outstanding performance at high frequency oper...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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30A SIC Integrated Circuit Chip SCT070H120G3AG H²PAK-7 Silicon Carbide Power MOSFET

30A SIC Integrated Circuit Chip SCT070H120G3AG H��PAK-7 Silicon Carbide Power MOSFET�� Product Description Of SCT070H120G3AG SCT070H120G3AG features a very low RDS(on) over the entire temperature range combined w...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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NTMFS0D9N03CGT1G Silicon Carbide Power MOSFET Single N-Channel Transistors

NTMFS0D9N03CGT1G Silicon Carbide Power MOSFET Single N-Channel Transistors Product Description Of NTMFS0D9N03CGT1G NTMFS0D9N03CGT1G is N-Channel 30 V 48A (Ta), 298A (Tc) 3.8W (......

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Aluminum Nitride Substrate Silicon Carbide Power Module MICROCHIP MSCSM120DAM11CT3AG 1200 Volt 254 Amp

...-low loss SiC Power MOSFETs with zero reverse and forward recovery SiC Schottky Diodes. The module boasts low stray inductance, a Kelvin source for ......

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Triple Phase Silicon Carbide Power Module MICROCHIP MSCSM70TAM05TPAG 700 Volt 349 Amp Full SiC Module

Product Overview The MSCSM70TAM05TPAG is a triple phase leg 700 V/349 A full silicon carbide (SiC) power module. It offers low RDS(on), high-speed switching, and ultra-low loss with very low stray inductance an...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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HEV Silicon Carbide Power Modules 1200V 200A Automotive Modules FS05MR12A6MA1BBPSA1

Silicon Carbide MOSFET Modules FS05MR12A6MA1BBPSA1 1200V 200A Automotive Modules Detailed Description FS05MR12A6MA1BBPSA1 is a six-pack module which benefits from Infineon’s robust silicon carbide for hybrid an...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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C3M0016120K TO-247-4 Silicon Carbide Power N-type MOSFET Electronic Component Silicon Carbide SIC FET IC Chip

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Shenzhen Anxinruo Technology Co., Ltd.
China

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Grinding Non Ferrous Materials Pure Black Silicon Carbide Sic-88 Powder

...l suited for power applications, mainly due to its ability to withstand high voltages, which are ten times higher than those that can be used by silicon. Silicon carbide-based semiconductors have higher ther...

Zhenan Metallurgy Co., Ltd
Henan

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SiC Epitaxial Wafer Silicon Carbide 4H 4inch 6inch High Resistivity Semiconductor Industry

...Silicon Carbide 4H 4inch 6inch High Resistivity Semiconductor Industry Description of SiC Epitaxial Wafer: Silicon carbide epitaxy is a compound semiconductor material composed of carbon and silicon elements...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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