Total 69678 products for silicon carbide power electronics Manufacture & Suppliers

• 1520C Degree Silicon Carbide Heating Rod , 99% Pure Silicon Carbide Heater

  

  High Purity Silicon Carbide Sic Heating Elements Heaters Sic Electric Heater For High Temperature Furnace SiC heating element/ SiC heater /Silicon Carbide Heating Rods is made of top quality green silicon carbi...

  Nanyang Xinda Electro-Mechanical Co., Ltd.

  Henan,China

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• C SiC Black Silicon Carbide Industrial Abrasives OHSAS18001 Approval

  

  Black silicon carbide, Silicon carbide, SiC, C Product description of Black silicon carbide: Black silicon carbide is produced at high temperature in an electric resistance type furnace with quartz sand and pet...

  China Abrasives Industry Hainan Corporation

  Hainan,China

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• Length 300mm SiC Heating Elements 1500W Silicon Carbide Elements

  

  ... and maintenance of the components more convenient. In addition, the W-type three-phase silicon carbide rod is composed of three high-purity silicon carbide rods connected by a common silicon carbide rod at ...

  ZHENGZHOU SONGYU HIGH TEMPERATURE TECHNOLOGY CO.,LTD

  Henan,China

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• Induction Melting Furnace Sic Saggar Silicon Carbide Graphite Crucible For Melting Copper Aluminum Gold

  

  ... and carbon products. Suitable for metal smelting in ground furnaces, electric furnaces, intermediate frequency furnaces and high frequency furnaces. Silicon Carbide Crucible Advantage Silicon carbide crucib...

  Zhengzhou Rongsheng Refractory Co., Ltd.

  Henan,China

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• Silicon / Silicon Carbide (SiC) Wafer Four-Stage Linked Polishing Automation Line (Integrated Post-Polish Handling Line)

  

  ...

  SHANGHAI FAMOUS TRADE CO.,LTD

  Shanghai,China

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• Silicon Carbide Schottky Diode Bestirpower BCF65S16D3 650V 16A for Solar Inverters Power Supplies

  

  ... voltage and robustness. This diode is designed for applications demanding high power efficiency, offering benefits such as high surge current capability, no reverse recovery, and benchmark switching behavio...

  Hefei Purple Horn E-Commerce Co., Ltd.

  Anhui,China

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• Power N Channel Silicon Carbide Cascode JFET TO247 3 onsemi UF3C065040K3S 650 Volt 42 Milliohm Device

  

  Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-3, 650 V, 42 mohm UF3C065040K3S The UF3C065040K3S is a 650 V, 42 m Silicon Carbide (SiC) Cascode JFET from onsemi, featuring a co-packaged G...

  Hefei Purple Horn E-Commerce Co., Ltd.

  Anhui,China

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• Silicon Carbide Cascode JFET onsemi UF3C120080K3S designed for switching in motor drives and power supplies

  

  UF3C120080K3S Silicon Carbide (SiC) Cascode JFET The UF3C120080K3S is a Silicon Carbide (SiC) Cascode JFET designed for high-performance power applications. This device utilizes a unique cascode circuit configu...

  Hefei Purple Horn E-Commerce Co., Ltd.

  Anhui,China

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• SILICON CARBIDE POLYESTER CLOTH SEGMENTED BELT FOR PANEL / MDF / CHIPBOARD, 2700MMX3200MM

  

  ... sanding applications in the engineered wood industry. Constructed with Z-weight antistatic polyester cloth, premium silicon carbide grains, and resin-over-resin bonding, it delivers outstanding cutting powe...

  WEEM Abrasives

  Guangdong,China

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• STPSC20H12G-TR Diode IC Silicon Carbide Schottky 1200V 20A Surface Mount D2PAK-2

  

  ... performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Especially...

  ShenZhen Mingjiada Electronics Co.,Ltd.

  China

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• STPSC40H12CWL Diode Array IC 1 Pair Common Cathode Silicon Carbide Schottky Through Hole

  

  ...Common Cathode Silicon Carbide Schottky Through Hole TO-247-3 Product Description Of STPSC40H12CWL The STPSC40H12CWL, available in TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manuf...

  ShenZhen Mingjiada Electronics Co.,Ltd.

  China

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• FFSH5065B-F085 Automobile Chips TO-247-2 50A 650V Silicon Carbide Schottky Diode

  

  ... frequency, increased power density, reduced EMI, and reduced system size and cost. Specification Of FFSH5065B-F085 Part Number FFSH5065B-F085 Technology SiC (Silicon Carbide) Schottky Voltage - DC Reverse (...

  ShenZhen Mingjiada Electronics Co.,Ltd.

  China

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• 20A FFSB2065B-F085 Silicon Carbide Schottky Diode TO-263-3 Automobile Chips

  

  ...Silicon Carbide Schottky Diode TO-263-3 Automobile Chips Product Description Of FFSB2065B-F085 FFSB2065B-F085 is Discrete Semiconductor Products - Rectifiers Single Diodes, System benefits include highest ef...

  ShenZhen Mingjiada Electronics Co.,Ltd.

  China

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• Silicon Carbide DF23MR12W1M1PB11BPSA1 Automotive IGBT Modules 20mW 2N-Channel

  

  Silicon Carbide DF23MR12W1M1PB11BPSA1 Automotive IGBT Modules 20mW 2N-Channel​ Product Description Of DF23MR12W1M1PB11BPSA1 DF23MR12W1M1PB11BPSA1 is Booster 1200 V CoolSiC™ MOSFET Module, 2 N-Channel (Dual) Tra...

  ShenZhen Mingjiada Electronics Co.,Ltd.

  China

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• 2N-Channel FF6MR12W2M1B11BOMA1 Automotive IGBT Modules 1200V Silicon Carbide

  

  ...Silicon Carbide Product Description Of FF6MR12W2M1B11BOMA1 FF6MR12W2M1B11BOMA1 is 2 N-Channel (Dual) Silicon Carbide (SiC) MOSFETs Module, 1200V Mosfet Array, Chassis Mount. ​Specification Of FF6MR12W2M1B11B...

  ShenZhen Mingjiada Electronics Co.,Ltd.

  China

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• 1200V Diode MSC050SDA120B Zero Recovery Silicon Carbide Schottky Diode TO-247-3

  

  ...Silicon Carbide Schottky Diode TO-247-3​ Product Description Of MSC050SDA120B MSC050SDA120B is Zero Recovery Silicon Carbide Schottky Diode, it is a 1200 V, 50 A SiC SBD in a two-lead TO-247 package. Specifi...

  ShenZhen Mingjiada Electronics Co.,Ltd.

  China

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• Diodes MSC015SDA120B Silicon Carbide Schottky 1200V Rectifiers Single Diodes TO-247

  

  ... Part Number: MSC015SDA120B Maximum Working Peak Reverse Voltage: 1200V Maximum DC Forward Current(TC = 135 °C): 17A Power Dissipation(TC = 110 °C ): 72W Lead Temperature For 10 Seconds:...

  ShenZhen Mingjiada Electronics Co.,Ltd.

  China

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• Silicon Carbide IMW120R090M1H N-Channel 1200V MOSFETs Transistors TO-247-3

  

  ... 21 nC @ 18 V Vgs (Max) +23V, -7V Input Capacitance (Ciss) (Max) @ Vds 707 pF @ 800 V Power Dissipation (Max) 115W (Tc) Operating Temperature -55°C ~...

  ShenZhen Mingjiada Electronics Co.,Ltd.

  China

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• Trench Silicon Carbide MOSFET IMW120R350M1H Integrated Circuit Chip TO-247-3

  

  ...Silicon Carbide MOSFET IMW120R350M1H Integrated Circuit Chip TO-247-3​ Product Description Of IMW120R350M1H IMW120R350M1H is 1200 V CoolSiC™ Trench Silicon Carbide MOSFETs in TO247-3 Package. Specification O...

  ShenZhen Mingjiada Electronics Co.,Ltd.

  China

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• Integrated Circuit Chip IMZA65R039M1H Silicon Carbide TO-247-4 N-Channel Transistors

  

  ... losses. Specification Of IMZA65R039M1H Part Number IMZA65R039M1H Input Capacitance (Ciss) (Max) @ Vds 1393 pF @ 400 V Technology SiCFET (Silicon Carbide) Vgs (Max) +20V, -2V Gate Charge (Qg) (Max) @ Vgs 41 ...

  ShenZhen Mingjiada Electronics Co.,Ltd.

  China

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