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Total 7044 products for silicon carbide semiconductor Manufacture & Suppliers

Customized SiC Rods 1600C Industrial Heating Silicon Carbide Bar

...silicon carbide rod Looking to the future, the H-shaped silicon heating element has great potential for further development and improvement. As technology continues to advance, we can expect to see even more...

ZHENGZHOU SONGYU HIGH TEMPERATURE TECHNOLOGY CO.,LTD
Henan,China

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U-Type Silicon Carbide Rod (Dia. 16mm, Heating Length 300mm, Cold End Length 300mm)

...silicon heating element is manufactured by taking two carefully-matched SiC rods and welding a thickened silicon carbide bridge. This element provides for wiring both tail ends from one side of the furnace. ...

ZHENGZHOU SONGYU HIGH TEMPERATURE TECHNOLOGY CO.,LTD
Henan,China

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High Purity un-doped Silicon Carbide sic Wafer , 6Inch 4H-Semi Sic Silicon Carbide Substrate

6inch sic substrates, 4h-n,4H-SEMI,sic ingot sic crystal ingots sic crystal block sic semiconductor substrates,High purity silicon carbide SiC Wafer SiC crystal are cutted into slices, and polishing, the SiC wa...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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2inch SIC Silicon Carbide Wafer 4H-N Type For MOS Device Dia 0.4mm

2inch SIC Silicon Carbide Wafer 4H-N Type For MOS Device Dia 0.4mm Product introduction The 4H n-type Silicon Carbide (SiC) single crystal substrate is a critical semiconductor material widely utilized in power...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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Sic Silicon Carbide Substrate 5.0*5.0mm Square 6H-P Type Thickness 350μm Zero Grade Dummy Grade

Product Description: Sic Silicon Carbide Substrate 5.0*5.0mm Square 6H-P Type Thickness 350��m Zero Grade Dummy Grade 6H-SiC (Hexagonal Silicon Carbide) is a wide bandgap semiconductor material with good thermal...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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6Inch Sic Silicon Carbide Substrate 6H-P Type For Communications And Radar Systems Diameter 150mm Prime Grade

Product Description: 6Inch Sic Silicon Carbide Substrate 6H-P Type For Communications and radar systems Diameter 150mm Prime Grade 6H-SiC (Hexagonal Silicon Carbide) is a wide bandgap semiconductor material wit...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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Silicon Carbide SIC Wafer 10*10 mm 6H-P Thickness 350μm For High-power Devices

Product Description: Silicon Carbide SIC Wafer 10*10 mm 6H-P Thickness 350��m For High-power Devices 6H-SiC (Hexagonal Silicon Carbide) is a wide bandgap semiconductor material with good thermal conductivity and...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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2Inch 4H-P SIC Silicon Carbide Wafer For Photovoltaics Thickness 350μm Diameter 50.8mm Zero Grade

Product Description: 2Inch 4H-P SIC Silicon Carbide Wafer For Photovoltaics Thickness 350μm Diameter 50.8mm Zero Grade 4H-P silicon carbide (SiC) is an important semiconductor material commonly used in high-tem...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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4Inch Silicon Carbide Sic wafer 4H-P Type Diameter 100mm Thickness 350 μm Prime Grade Research Grade

Product Description: 4Inch Silicon Carbide Sic wafer 4H-P Type Diameter 100mm Thickness 350 μm Prime Grade Research Grade 4H-P silicon carbide (SiC) is an important semiconductor material commonly used in high-...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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6Inch Sic Silicon Carbide Substrate 4H-P Diameter 150mm Thickness 350μm Zero MPD Production, Standard Production Grade

Product Description: 6Inch Sic Silicon Carbide Substrate 4H-P Diameter 150mm Thickness 350μm Zero MPD Production, Standard Production Grade 4H-P silicon carbide (SiC) is an important semiconductor material comm...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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Sic Silicon Carbide Wafer 5*5mm/10*10mm 4H-P Type Production Grade For Power Electronics

Product Description: Sic Silicon Carbide Wafer 5*5mm/10*10mm 4H-P Type Production Grade For Power Electronics 4H-P silicon carbide (SiC) is an important semiconductor material commonly used in high-temperature,...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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2Inch Sic Silicon Carbide Substrate 3C-N Type 50.8mm Diameter Production Grade Research Grade Dummy Grade

Product Description: 2Inch Sic Silicon Carbide Substrate 3C-N Type 50.8mm Diameter Production Grade Research Grade Dummy Grade 3C-SiC (Cubic Silicon Carbide) is a wide bandgap semiconductor material with good e...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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Silicon Carbide Substrate 4'' Sic 3C-N Diameter 100mm Conductive Type Zero MPD Production Grade

Product Description: Silicon Carbide Substrate 4" Sic 3C-N Diameter 100mm Conductive Type Zero MPD Production Grade 3C-SiC (Cubic Silicon Carbide) is a wide bandgap semiconductor material with good electrical a...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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Silicon Carbide Wafer 6Inch Sic Single Crystal 150mm Diameter 3C-N Type Suit for Communication Radar Systems

Product Description: Silicon Carbide Wafer 6Inch Sic Single Crystal 150mm Diameter 3C-N Type Suit for Communication Radar Systems 3C-SiC (Cubic Silicon Carbide) is a wide bandgap semiconductor material with goo...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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5*5mm/10*10mm Silicon Carbide Wafer Thickness 350μm Sic 3C-N Type High Mechanical Strength Production Grade

Product Description: 5*5mm/10*10mm Silicon Carbide Wafer Thickness 350��m Sic 3C-N Type High Mechanical Strength Production Grade 3C-SiC (Cubic Silicon Carbide) is a wide bandgap semiconductor material with good...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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12Inch Sic Single Crystal Silicon Carbide Substrate Large Size High Purity Diameter 300mm Product Grade For 5G communication

... innovation in the semiconductor industry, with dimensions up to 300 mm, much larger than traditional 6 or 8inch substrates. This increase in size means that more chips can be made on a single wafer, signifi...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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Sic silicon carbide wafer 4H-P type on axis 0°Used to manufacture high power devices

Product Description: Sic silicon carbide wafer 4H-P type on axis 0°Used to manufacture high power devices 4H-P type silicon carbide substrate is a semiconductor material with a hexagonal lattice structure, and ...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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Silicon Carbide Wafer Sic Substrate 4H-P Type Off Axis 4.0°toward Zero Grade For Temperature Sensor

Product Description: Silicon Carbide Wafer Sic Substrate 4H-P Type Off axis: 4.0°toward Zero Grade For temperature sensor 4H-P silicon carbide (SiC) substrate is a high performance semiconductor material with a...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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Silicon Carbide Semiconductor

Total 7044 products for silicon carbide semiconductor Manufacture & Suppliers

Customized SiC Rods 1600C Industrial Heating Silicon Carbide Bar

U-Type Silicon Carbide Rod (Dia. 16mm, Heating Length 300mm, Cold End Length 300mm)

High Purity un-doped Silicon Carbide sic Wafer , 6Inch 4H-Semi Sic Silicon Carbide Substrate

2inch SIC Silicon Carbide Wafer 4H-N Type For MOS Device Dia 0.4mm

Sic Silicon Carbide Substrate 5.0*5.0mm Square 6H-P Type Thickness 350μm Zero Grade Dummy Grade

6Inch Sic Silicon Carbide Substrate 6H-P Type For Communications And Radar Systems Diameter 150mm Prime Grade

Silicon Carbide SIC Wafer 10*10 mm 6H-P Thickness 350μm For High-power Devices

2Inch 4H-P SIC Silicon Carbide Wafer For Photovoltaics Thickness 350μm Diameter 50.8mm Zero Grade

4Inch Silicon Carbide Sic wafer 4H-P Type Diameter 100mm Thickness 350 μm Prime Grade Research Grade

6Inch Sic Silicon Carbide Substrate 4H-P Diameter 150mm Thickness 350μm Zero MPD Production, Standard Production Grade

Sic Silicon Carbide Wafer 55mm/1010mm 4H-P Type Production Grade For Power Electronics

2Inch Sic Silicon Carbide Substrate 3C-N Type 50.8mm Diameter Production Grade Research Grade Dummy Grade

Silicon Carbide Substrate 4'' Sic 3C-N Diameter 100mm Conductive Type Zero MPD Production Grade

Silicon Carbide Wafer 6Inch Sic Single Crystal 150mm Diameter 3C-N Type Suit for Communication Radar Systems

55mm/1010mm Silicon Carbide Wafer Thickness 350μm Sic 3C-N Type High Mechanical Strength Production Grade

12Inch Sic Single Crystal Silicon Carbide Substrate Large Size High Purity Diameter 300mm Product Grade For 5G communication

Sic silicon carbide wafer 4H-P type on axis 0°Used to manufacture high power devices

Silicon Carbide Wafer Sic Substrate 4H-P Type Off Axis 4.0°toward Zero Grade For Temperature Sensor