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Nexperia BCP56 Series: 80 V, 1 A NPN Medium Power Transistors Product Overview The Nexperia BCP56 series comprises NPN medium power transistors designed for surface-mount applications. These transistors are hou...
...transistors designed for small Surface-Mounted Device (SMD) plastic packages. These fully isolated internal transistors offer precise current gain and base-emitter voltage matching, making them ideal drop-in...
...complementary to the BC846/BC847/BC848/BC849 series. These transistors are lead-free, compliant with EU RoHS 2011/65/EU directive, and feature a green molding compound as per IEC61249 Std. (......
...Transistor The BC847BS is an NPN epitaxial silicon planar design general purpose dual transistor designed for amplifier applications. It is lead-free and compliant with EU RoHS 2011/65/EU directive, utilizin...
... and are AEC-Q101 qualified. These transistors are lead-free in compliance with EU RoHS 2.0 and use a green molding compound as per IEC 61249 standard. Product Attributes Brand: ......
BC856 Series PNP General Purpose Transistors The BC856 series are PNP general-purpose transistors designed for amplifier applications. These transistors offer a collector current of up to -100mA and are complem...
..., lead-free in compliance with EU RoHS 2.0, and use a green molding compound as per IEC 61249 standard. These transistors are housed in a SOT-323 plastic package.Product Attributes Brand: Not specified Origi...
...Transistor The 2SC5866 is a medium power transistor designed for high-speed switching applications. It features high speed switching with a typical fall time of 35ns at IC=2A, low saturation voltage (typical...
...transistor designed for high-speed switching applications. It features a small flat package, high-speed switching time, and a low collector-emitter saturation voltage. This transistor is complementary to the...
...Transistors The SL44H11 is a silicon NPN power transistor designed for general-purpose power amplification and switching. It features a low collector-emitter saturation voltage (VCE(sat)= 1.0V(Max)@ IC = 8A)...
... to the 2SC5200N. This transistor is recommended for the output stage of 100-W high-fidelity audio frequency amplifiers.Product Attributes Brand: TOSHIBA Product Type: Bipolar Transistors Material: Silicon T...
Product Overview The MMBT5551 is an NPN transistor in a SOT-23 package designed for switching and AF amplifier applications. It offers robust performance with high breakdown voltages and controlled current gain...
Product Overview General Purpose Amplifier with Epitaxial planar die construction. Features high stability and high reliability. Available in SOT-23 plastic encapsulation.Product Attributes Case Style: SOT-23 M...
Product Overview The S8050-H is an NPN low frequency power amplifier from Niuhang Specification Electronic Co. Ltd. It is suitable for the driver stage of small motors and is available in a SOT-23 package. The ...
Product Overview The 2SA1943/2SC5200 are semiconductor discrete devices designed for low-frequency amplification. They offer high breakdown voltage, low leakage current, and superior frequency characteristics, ...
Product Overview High-Frequency Amplifier designed for various electronic applications. This device offers excellent performance characteristics, including high transition frequency and low noise factor, making...
... power amplifiers. FEATURES ●Suitable for use in driver stage of 50 to 100 W audio amplifiers and output stage of TV vertical deflection circuit. ●High Voltage and High fT VcEo = 120 V/160 V (2SC2690, 2SC269...
...Transistors Product Description: The HMC789ST89ETR RF Power Transistors are high-performance, high-frequency, high-power transistors suitable for use in amplifier applications. The HMC789ST89ETR offers excel...
...Transistors (BRT) with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) co...
...Transistors (BRT) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a mono...