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...Transistor The 2SC5663 and 2SC5585 are low-frequency transistors designed for amplifier and driver applications. They offer high current capability and low VCE(sat) for efficient operation. Available in SOT-...
... small signal amplifier transistors designed for various electronic applications. They feature low output capacitance (Cob = 2.0pF Typ.) and complement PNP transistors such as the 2SA2029 and others. These t...
High-Frequency Amplifier Transistor This series of high-frequency amplifier transistors offers high transition frequency (typ. fT = 1.5GHz), small rbbCc and high gain (typ. 6ps), and low Noise Figure (NF). Thes...
...2SD1383K is a high-gain amplifier transistor featuring a Darlington connection for high DC current gain and a built-in 4k resistor between base and emitter. It complements the 2SB852K and is designed for hig...
...Transistor designed for low-noise and high-gain applications. It offers high power gain and is ideal for use as a low-noise amplifier in VHF, UHF, and CATV band applications. This transistor is housed in a S...
...Transistor designed as a complementary component to the S9015. It offers excellent HFE linearity and is suitable for low-level, low-noise pre-amplifier applications. The transistor has a power dissipation ra...
...Transistor designed for the output stage of 1-watt amplifiers. It offers high DC current gain and comes in a small flat SOT-89 package. This transistor is suitable for applications requiring PC (Collector Di...
...Transistor designed for high-frequency, low-noise amplifier applications. It offers low noise characteristics and high gain, with a power dissipation capability of 150mW. This transistor is suitable for dema...
...transistor encapsulated in a SOT-23 plastic package. It is designed for general-purpose amplifier applications and serves as a complementary type to the MMBTA06 NPN transistor. This component offers reliable...
...transistor designed for microwave low-noise amplifier applications. Manufactured using silicon epitaxial process technology, it offers high power gain, wide bandwidth, low noise, low leakage current, and sma...
...Transistor offers low collector saturation voltage and high DC current gain, ensuring high reliability and minimum lot-to-lot variations for robust device performance. It is suitable for applications includi...
...transistors ideally suited for automatic insertion, designed for switching and AF amplifier applications. These transistors offer a range of electrical characteristics and are available in the SOT-23 package...
...Transistor designed for switching and amplifier applications. It offers a range of DC current gain values depending on the operating conditions and features specific cutoff currents and breakdown voltages. T...
...Transistor designed for power amplifier and power switching applications. It features a low saturation voltage (VCE(SAT) = 0.5V Max.) and high-speed switching capabilities (TSTG = 1.0s Typ.). The transistor ...
...transistor designed for power amplifier and power switching applications. It features a low saturation voltage (VCE(sat) = -0.5 V max at IC = -1.5 A) and high-speed switching time (tstg = 0.2 s typ.). This t...
...TRANSISTOR The 2SC5200 is an NPN epitaxial silicon transistor from UNISONIC TECHNOLOGIES CO., LTD, specifically recommended for 100W high fidelity audio frequency amplifier output stages. It is complementary...
...PNP epitaxial transistor featuring excellent hFE linearity, high voltage capability (VCEO = -50 V min), and a complementary nature to the 2SC3325. It is designed for audio frequency low power amplifier appli...
...Transistor Silicon NPN Epitaxial Type The TMBT3904 is a silicon NPN epitaxial transistor from TOSHIBA, designed for audio frequency general purpose amplifier applications. It offers high voltage and high cur...
...transistor designed for audio frequency general purpose amplifier applications. It is AEC-Q101 qualified and features high voltage capability (VCEO = 120 V), excellent hFE linearity, high hFE (200 to 700), l...
..., high-speed switching time of 1.0 s (typ.), and is housed in a small flat package. This transistor is complementary to the 2SA1213.Product Attributes Brand: TOSHIBA Type: Silicon NPN Epitaxial Transistor (P...