| Sign In | Join Free | My burrillandco.com |
|
...Solution Product Description: SIHP12N50C-E3 MOSFET Transistor is a high voltage N-channel MOSFET with low on-resistance and fast switching times. This MOSFET is designed for use in applications such as motor...
... such as high-speed switching, motor control, switching power supplies, and other power management applications. Product Features: • Maximum Drain Source Voltage: 500V • Maximum Drain Current: 120A •...
IRF1010EPBF MOSFET Power Electronics High Performance High Reliability Switching Solution The IRF1010EPBF is a high-density MOSFET transistor with a drain-source breakdown voltage of 100V and a maximum drain cu...
...making it ideal for high-efficiency power switching applications. It is designed with a maximum drain source voltage of 500V and a drain current of 4A, making it suitable for a wide range of switching applic...
...Solution for Your Needs The SI9407BDY-T1-GE3 is a N-Channel MOSFET designed to provide low on-resistance and wide voltage range performance. This device is suitable for use in low voltage, low frequency swit...
IRF540NPBF MOSFET Power Electronics High Performance Low Cost Reliable Solution Description: The IRF540NPBF MOSFET is a standard level N-channel MOSFET with a maximum drain-source voltage of 100V and a maximum ...
..., AC/DC power supplies and actuators. It features a low on-resistance of 0.4 Ω and a very low gate charge of 2.6 nC. Product Parameters: • Drain-Source Voltage: 100V •...
...MOSFET Power Electronics High-Performance High-Reliability Switching Solution Product Features: • N-channel MOSFET • 117A Continuous Drain Current at 25°C • 600V Drain-Source Breakdown Voltage • 4.5Ohms Maxi...
... MOSFET High Performance Power Electronics Solution for Maximum Efficiency Description: The IRFR4620TRLPBF is a N-Channel MOSFET transistor with a rated drain current of 10A and a maximum drain-source voltag...
... and DC/DC converters. It features a low threshold voltage, fast switching speed, and excellent thermal performance. Parameters: - Drain-Source Voltage:...
SQ2361AEES-T1_BE3 MOSFET Power Electronics High-Performance High-Reliability Solution Product Features: RDS(ON): 4.7 mOhm Drain-Source Voltage (Vdss): 33V Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V Curr...
NTA7002NT1G MOSFET Power Electronics SC-75 High Performance Switching Solution FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 154mA...
NTA4153NT1G MOSFET Power Electronics SC-75 High Power Switching Control Solutions Automotive Industrial Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Curren...
FDN338P MOSFET Power Electronics High Performance Reliable Power Supply Solution TO-236-3 FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @...
NDS331N MOSFET Power Electronics TO-236-3 High Performance Reliable Power Switching Solutions FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (I...
... MOSFET Power Electronics TO-236-3 Package High Performance Reliable Switching Solution Applications Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20...
... MOSFET Power Electronics N-Channel Enhancement Mode Device High Performance Reliable Power Switching Solution FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current ...
NTA4151PT1G SC-75 MOSFET Power Electronics High-Efficiency and Low-Voltage Switching Solution for Your Power Needs FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current ...
FDD86367 MOSFET Power Electronics TO-252-3 Transistor High Performance Efficiency Reliable Solution FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80 V Current - Continuous Dr...
FQD5N60CTM MOSFET Power Electronics - High Performance High Efficiency and Reliable Power Solution N-Channel QFET 600 V, 2.8 A, 2.5 Ω Drain to Source Voltage (Vdss) 600 V Current - Continuous Drain (Id) @ 25°C ...