| Sign In | Join Free | My burrillandco.com |
|
...Memory IC Product Description Of S29JL064J55BHI003 S29JL064J55BHI003 device is designed to be programmed in-system with the standard 3.0 volt VCC supply, and can also be programmed in standard EPROM programm...
... SPI - Octal I/O Memory IC Product Description Of S27KS0643GABHB023 S27KS0643GABHB023 device is a high-speed CMOS, self-refresh Dynamic RAM (DRAM), with a HyperBus interface. Specification Of S27KS0643GABHB0...
...Chip S70KS1282GABHB033 200 MHz Memory Surface Mount Product Description Of S70KS1282GABHB033 S70KS1282GABHB033's Read transactions can be specified to use either a wrapped or linear burst. During wrapped ope...
...Memory IC Product Description Of S70KL1282GABHB033 S70KL1282GABHB033's fixed initial latency is independent of any need for a distributed refresh, it simply provides a fixed (deterministic) initial latency f...
...Memory IC S26HS01GTFPBHV023 166MHz High Speed CMO 24-FBGA IC Chips Product Description Of S26HS01GTFPBHV023 S26HS01GTFPBHV023 The HYPERBUS™ interface (DDR) transfers two data bytes per clock cycle on the d...
..., execute-in-place (XIP) functionality, advanced write protection mechanisms, and extended address access. Specification Of MT25QU128ABA8E12-0SIT Part Number MT25QU128ABA8E12-0SIT Moisture Sensitive: Yes Pro...
...: MT25TL01GBBB8ESF-0AAT Density: 1Gb VCC: 2.7–3.6V VCCQ: 1.65V Page Size: 16 Words Or 32 Bytes Page Access: 20ns Features Of MT25TL01GBBB8ESF-0AAT Dual/quad I/O...
... that describes important device characteristics and serial access methods used to read the parameter table data. Specification Of MT25QL128ABB1ESE-0AUT Part Number MT25QL128ABB1ESE-0AUT Supply Voltage - Min...
... Memory IC 23-XFBGA Product Description Of MT25QU256ABA8E55-0SIT MT25QU256ABA8E55-0SIT features a high-speed SPI-compatible bus interface, execute-in-place (XIP) functionality, advanced write protection mec...
...inadvertent WRITE operations during power-up, a power-on reset circuit is included. Specification Of MT25QU512ABB8E56-0SIT Part Number: MT25QU512ABB8E56-0SIT Page Access: 20ns VCC: 2.7-3.6V Page Size: 16 Wor...
Memory IC Chip MT62F1536M64D8CZ-023 AIT:C 96Gbit Automotive LPDDR5X SDRAM Product Description Of MT62F1536M64D8CZ-023 AIT:C MT62F1536M64D8CZ-023 AIT:C This is critical for preventing 5G data bottlenecks. The L...
...Memory IC Product Description Of MT62F2G64D8CZ-023 AUT:C MT62F2G64D8CZ-023 AUT:C The DRAM allows 5G smartphones to process data at peak speeds of up to 6.4Gbps. This is critical for preventing 5G data bottl...
...Memory With High-Speed Clock Product Description Of M95256-DRMF3TG/K M95256-DRMF3TG/K is 256-Kbit serial EEPROM Automotive grade devices operating up to 145°C. It is compliant with the very high level of rel...
... at random and thermally welded by a calendering process, or Spunlaid thermobonded method, plus a meltblown layer and then another of spunbonded polypropylene. Product Specification Production Name ......
...Chip - High Performance Reliable Memory Solution Product Listing: CYPRESS S34ML01G100TFI000, Integrated Circuit IC Chip •Up to 1 Gb (128M x 8) NAND Flash Memory •Voltage range from 1.8V to 3.6V •Page Read an...
...-bit ARM Cortex-M4 microcontroller unit (MCU) featuring 64KB Flash memory, 128KB RAM, 10-bit Analog to Digital Converter (ADC), full-speed USB 2.0, LCD interface, Advanced Encryption Standard (AES) and Rando...
Entrance Automatic Barrier Gate Access Control Systems For Static Electricity Brief Introductions: Made of 304 stainless steel,Goldantell tripod turnstile with nice and elegant shape,antirust,durable, Resistant...
... card, ID card, barcode reader,fingerprint reading card recognition device used for staff, provide civilized, orderly access methods; effectively manage the access of staff. Can be widely used in the station...
Automatic Pedestrian Entrance Barrier Access Systems ESD Flap Barrier ESD turnstile is a device that combines electrostatic testing and access control management, which designed to detect whether employees'...
IS61SP12832-5TQI Synchronous Memory Data Storage SRAM TQFP-100 SDR Memory Size: 4 Mbit Access Time: 5 ns Maximum Clock Frequency: 100 MHz Supply Voltage - Min: 3.135 V Supply Current - Max: 220 ......