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Storm Drain Channel

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Total 6145 products for storm drain channel Manufacture & Suppliers

IRFP4468PBF MOSFET Power Electronics High Current 100V N Channel MOSFET

.../ns. 6. Ease of paralleling. 7. Low thermal resistance. 8. Lead-free (RoHS compliant). Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to...

Shenzhen Sai Collie Technology Co., Ltd.
China

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SQ2337ES-T1 BE3 Semiconductor Ic Chip 45V N Channel Enhancement Mode

SQ2337ES-T1_BE3 45V N-Channel Enhancement Mode MOSFET Power Electronics Device FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80 V Current - Continuous Drain (Id) @ 25°C 2.2A ...

Shenzhen Sai Collie Technology Co., Ltd.
China

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SI7119DN-T1-E3 MOSFET Power Electronics P Channel 200 V 3.8A Surface Mount

SI7119DN-T1-E3 High Performance MOSFET Power Electronics P-Channel 200 V 3.8A Surface Mount FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200 V Current - Continuous Drain (Id...

Shenzhen Sai Collie Technology Co., Ltd.
China

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SQD19P06-60L GE3 Smart Ic Chip P Channel 60 V 20A 46W Surface Mount

SQD19P06-60L_GE3 MOSFET Power Electronics P-Channel 60 V 20A 46W Surface Mount Package TO-252AA FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain ...

Shenzhen Sai Collie Technology Co., Ltd.
China

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SQD50P04-09L GE3 MOSFET Power Electronics Automotive P-Channel

SQD50P04-09L_GE3 MOSFET Power Electronics Automotive P-Channel 40 V (D-S) 175 ��C Surface Mount TO-252AA FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V Current - Continuou...

Shenzhen Sai Collie Technology Co., Ltd.
China

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IRF840STRLPBF MOSFET Power Electronics N Channel 500 V D²PAK TO-263

IRF840STRLPBF MOSFET Power Electronics N-Channel 500 V D²PAK TO-263 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500 V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive V...

Shenzhen Sai Collie Technology Co., Ltd.
China

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AOD4189 MOSFET Power Electronics Transistors P Channel 40V 2.5W Surface Mount

AOD4189 MOSFET Power Electronics Transistors P-Channel 40 V 40A 2.5W 62.5W Surface Mount Package TO-252 FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V Current - Continuou...

Shenzhen Sai Collie Technology Co., Ltd.
China

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AOD407 Low Voltage P Channel Mosfet Voltage 60V 50W Surface Mount

AOD407 MOSFET Power Electronics Transistors 60V 50W Surface Mount P-Channel Package TO-252 FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) ...

Shenzhen Sai Collie Technology Co., Ltd.
China

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BSC070N10NS5 MOSFET Power Electronics Low Gate Charge N Channel Mosfet

... N-channel MOSFET with low drain-source on-resistance. It features low gate charge, low output capacitance, fast switching times, and low gate-to-drain charge. This MOSFET is ideal for use in high-side switc...

Shenzhen Sai Collie Technology Co., Ltd.
China

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N-Channel Power MOSFET Transistors MSC017SMA120B4 TO-247-4 Integrated Circuit Chip

...Channel Power MOSFET Transistors MSC017SMA120B4 TO-247-4 Integrated Circuit Chip Product Description Of MSC017SMA120B4 MSC017SMA120B4 is a 1200 V, 17 mΩ Silicon Carbide N-Channel Power MOSFET in a TO-247 pa...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Integrated Circuit Chip MSC035SMA070B4 N-Channel MOSFETs TO-247-4 Silicon Carbide

... to enable lighter, more compact system, Simple to drive and easy to parallel. Specification Of MSC035SMA070B4 Part Number: MSC035SMA070B4 Id - Continuous Drain Current: 77 A Rds On - Drain-Source Resistance...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Integrated Circuit Chip MSC015SMA070S 700V Silicon Carbide N-Channel Power MOSFET

...package. Specification Of MSC015SMA070S Part Number: MSC015SMA070S FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain To Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 126A ...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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N-Channel IPD35N10S3L26ATMA1 100V Automotive Grade MOSFETs Transistors TO-252-3

... charge for smaller driver output stage. Specification Of IPD35N10S3L26ATMA1 Part Number: IPD35N10S3L26ATMA1 Mounting Style: SMD/SMT Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Transistor IPD068N10N3GATMA1 N-Channel Power MOSFET Surface Mount Type 100V 90A

...Channel Power MOSFET Surface Mount Type 100V 90A Product Description Of IPD068N10N3GATMA1 IPD068N10N3GATMA1 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. ...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Surface Mount NTMFS6H818NLT1G N-Channel 80V Discrete Semiconductor Transistors

... Mount 5-DFN Transistors. Specification Of NTMFS6H818NLT1G Part Number NTMFS6H818NLT1G d - Continuous Drain Current: 135 A Rds On - Drain-Source Resistance: 3.2 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 ...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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N-Channel NVH4L160N120SC1 SiC Power Single MOSFET Transistors TO-247-4 1200V

..., package is TO247-4L. Specification Of NVH4L160N120SC1 Part Number: NVH4L160N120SC1 Vgs th - Gate-Source Threshold Voltage: 4.3 V Id - Continuous Drain Current: 17.3 A Vds - Drain-Source Breakdown Voltage: ...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Transistors TO-220-3 NTP125N65S3H Integrated Circuit Chip Power N‐Channel Transistors

...Channel Transistors Product Description Of NTP125N65S3H NTP125N65S3H is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Specification Of NTP1...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Transistors TO-247-3 TW015N120C,S1F N-Channel Single FETs MOSFETs Transistors 1200V

...: TW015N120C,S1F Qg - Gate Charge: 158 NC Vgs - Gate-Source Voltage: - 10 V, + 25 V Id - Continuous Drain Current: 100 A Rds On - Drain-Source Resistance: 182 MOhms Vgs Th -...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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1200V MOSFET SCTWA50N120 N-Channel Silicon Carbide Power MOSFET Through Hole HiP247

...Channel Silicon Carbide Power MOSFET Through Hole HiP247 Product Description Of SCTWA50N120 SCTWA50N120 Silicon carbide Power MOSFET 1200 V, 65 A, 59 mΩ (typ., TJ=150 °C) in an HiP247™ long leads package. Sp...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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N-Channel Transistors TW045N120C,S1F Silicon Carbide MOSFET Transistors TO-247-3

... Of TW045N120C,S1F Part Number: TW045N120C,S1F Vds - Drain-Source Breakdown Voltage: 1.2 KV Mounting Style: Through Hole Vgs - Gate-Source Voltage: - 10 V, + 25 V Vgs(Th) (Max) @ Id: 5V @ 1mA Id - Continuous...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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