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FDMC8010DC MOSFET Power Electronics for Advanced Applications N-Channel DUAL COOL 33 30 V 157 A 1.28 m Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 37A (Ta) Drive Voltage (Max Rds ...
NTD6416ANT4G TO-252-3 MOSFET Power Electronics Module with High Power Output and Low On-Resistance N-Channel 100 V 17 A 81 m Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25C 17A (Tc) ...
NTTFS4C10NTAG 8-WDFN MOSFET Power Electronics – Ideal for High-Power Switching Applications N-Channel 30 V 8.2A (Ta) 44A (Tc) 790mW (Ta) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°...
FDME905PT 6-PowerUFDFN MOSFET Electronics P-Channel POWERTRENCH −12 V −8 A 22 m Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12 V Current - Continuous Drain (Id) @ 25°C 8A (Ta) Drive Voltage (...
NTMFS4C10NT1G N MOSFET Power Electronics Single N-Channel SO-8 FL 30 V 46 A Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 8.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V ...
FDN537N High-Performance N-Channel MOSFET Single POWERTRENCH 30 V 6.5 A 23 m Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25C 6.5A (Ta), 6.5A (Tc) Drive...
MGSF1N03LT1G MOSFET Power Electronics Single N-Channel 30 V 2.1 A Package SOT-23 Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25C 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V,...
2V7002LT1G MOSFET Power Electronics N-Channel Small Signal 60 V 115 mA Package SOT-23-3 Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25C 115mA (Tc) Drive Voltage (Max Rds On, Min Rds O...
Product Description: 1. N-Channel Enhancement Mode Field Effect Transistor 2. Maximum Drain Source Voltage: 200V 3. Drain Current: 31A 4. RDS(on): 0.068Ω @ Vgs=10V 5. Fast Switching Speed 6. Low Gate to Source ...
Product Listing: IRFZ48NPBF - N-Channel MOSFET Power Electronics Parameters: • Drain to Source Voltage (Vdss): 55V • Continuous Drain Current (Id): 48A • Gate to Source Voltage (Vgs): 20V • Power Dissipation (P...
...Drain-Source Voltage (VDS): 60V • Continuous Drain Current (ID): 2.4A • Power Dissipation (PD): 4W • Operating Junction Temperature (TJ): -55°C to 175°C • Storage Temperature (TSTG): -55°C to 150°C • Transis...
...Channel SiC Trench Power Transistors TO-247-3 Product Description Of IMW65R030M1H IMW65R030M1H is 650V CoolSiC M1 SiC Trench Power Device, it is built over the solid silicon carbide technology. Specificatio...
...Channel 650V Transistors Product Description Of IMW65R083M1H IMW65R083M1H CoolSiC™ MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both the lowes...
...Channel Product Description Of MSC035SMA070B MSC035SMA070B is a 700 V, 35 mΩ SiC MOSFET in a TO-247 package. Fast and reliable body diode, Superior avalanche ruggedness. Specification Of MSC035SMA070B Part ...
... for use in Automotive and a wide variety of other applications. Specification Of AUIRF5210STRL Part Number AUIRF5210STRL Id - Continuous Drain Current: 38 A Rds On - Drain-Source Resistance: 60 mOhms Vgs - ...
...Channel 650V 24A Single MOSFETs Transistors Product Description Of IPP65R099CFD7AAKSA1 IPP65R099CFD7AAKSA1 provides for an integrated fast body diode and can be used for PFC and resonant switching topologies...
... Part Number SCTWA90N65G2V Drain to Source Voltage (Vdss) 650 V Current - Continuous Drain (Id) @ 25°C 119A (Tc) Drive Voltage (Max Rds On, Min Rds On) 18V Rds On (Max) @ Id, Vgs ......
...Channel MOS (DTMOS) TK10P60W Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control...
Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 48A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max)...
... 40 V Drain-Gate Voltage VDG 40 V Gate Current IG 10 mAdc Power Dissipation (1) TA = +25℃ PT 0.36 W ......