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AOD424G 20V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low R DS(ON) • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL • Battery protect...
High Switching Speed Mosfet Power Transistor For Linear Power Supplies General Description • Trench Power MOSFET technology • Low R DS(ON) • Logic Level Driving • RoHS and Halogen-Free Compliant Application • ...
Mosfet Power Transistor IGOT60R070D1AUMA1 MOSFET 600V CoolGaN Power Transistor Features Enhancement mode transistor Normally OFF switch Ultra fast switching No reverse-recovery charge Capable of rever...
High Switching Speed Mosfet Power Transistor For Linear Power Supplies General Description • Trench Power MOSFET technology • Low R DS(ON) • Logic Level Driving • RoHS and Halogen-Free Compliant Application • ...
...MOSFET Description The 20G04GD uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES N-CH...
High Switching Speed Mosfet Power Transistor For Linear Power Supplies General Description • Trench Power MOSFET technology • Low R DS(ON) • Logic Level Driving • RoHS and Halogen-Free Compliant Application • ...
AOD424G 20V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low R DS(ON) • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL • Battery protect...
...MOSFET GENERAL DESCRIPTION The JY11M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features comb...
... the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of ot...
... and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other a...
...MOSFET for BLDC motor driver GENERAL DESCRIPTION: The JY4N8M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on‐resistance with low gate charge. These featur...
... MAX Typ Typ CS2N65A5 TO-252 N 2 650 ±30 3 4 4000 4500 11 295 Product Description: This MOSFET product is built with advanced MOSFET technology which ensures low ON resistance, 100% avalanche tested, low Cis...
...MOSFET 200V 50A 300W Through Hole TO-247AC RoHS Compliant Other Name:64-6005PBF Feature l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R...
...MOSFET 55V 110A 200W Through Hole TO-220AB Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon ar...
... - Fast Switching - 100V Drain-Source Breakdown Voltage - RDS(on) = 0.065 Ohms - 175C Operating Temperature - 8.5A Continuous Drain Current - ......
... of only 7.6nC and an on-resistance of only 35mΩ. The MOSFET is capable of operation at high current levels, up to 10A, making it well-suited for a variety of applications. Features: - Low-voltage operation ...
...MOSFET Power Electronics High Quality High Efficiency and Reliability Product Description: The SI7658ADP-T1-GE3 is a N-Channel MOSFET with an embedded gate protection diode. This device is designed for use i...
IRFS4310TRLPBF High-Performance MOSFET for Power Electronics Applications Description: The IRFS4310TRLPBF MOSFET is a high-speed, low RDS(on) N-channel power MOSFET designed to optimize switching performance wi...
...Rectifier. This MOSFET is designed with a low gate-source resistance, enabling low power loss and improved switching performance. The IRFS4410ZTRLPBF is made with a planar structure and uses a combination of...
... switching, and low on-state resistance. Product Specifications: • Voltage: 25V • Power Rating: 1.2W • On-State Resistance: 0.5 Ohms • Drain-Source ......