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Product Overview Silicon PNP Darlington Power Transistors designed for general-purpose amplifier and low-speed switching applications. These transistors feature a TO-220 package, high DC current gain, and low c...
...a general-purpose NPN bipolar junction transistor designed for a wide range of applications. It offers a high DC current gain (hFE) and is suitable for amplification and switching circuits. The transistor is...
Product Overview The 2SC3904 is an NPN transistor designed for switching and amplification applications. It features a SOT-89 package and is ideal for various electronic circuits requiring reliable transistor p...
...transistor specifically designed for power amplifier and power switching applications. It offers a typical VCE(SAT) below 300mV at 5A, a maximum continuous current of 6A, and a minimum BVCEO of 100V, making ...
...transistor is designed for general-purpose applications. It offers reliable performance with key electrical characteristics such as DC current gain (hFE) and transition frequency (fT). The device is suitable...
Product Overview The FMMT493 is a high-performance NPN transistor designed for switching and AF amplifier applications. It is recommended as a complementary type to the PNP transistor FMMT593. This device offer...
...transistors ideally suited for automatic insertion, switching, and AF amplifier applications. These devices offer a range of electrical characteristics suitable for various circuit designs. Product Attribute...
...transistor designed for high-speed switching applications, including DC-DC converters and strobe circuits. It features high DC current gain (hFE = 400 to 1000 at IC = 0.1 A), low collector-emitter saturation...
...-to-emitter saturation voltage, high-speed switching, and high allowable power dissipation. It is complementary to the 2SA2016 and suitable for relay drivers, lamp drivers, motor drivers, and strobes.Product...
...transistor designed for general purpose amplifier and low speed switching applications. It offers a high Collector-Emitter Voltage (VCEO) of -150V and a Collector Dissipation (PC MAX) of 600mW. Key advantage...
...transistor designed for power amplifier and power switching applications. It features a low collector saturation voltage (VCE(SAT) = -0.5V MAX at IC = -1A) and high-speed switching time (tSTG = 1.0s TYP). It...
... transistor designed for medium power amplifier and switching applications, offering high power (850mW) and high current (1A) capabilities.Product Attributes Brand: UNISONIC TECHNOLOGIES CO., LTD Product Cod...
...Transistor designed with built-in bias resistors. This feature simplifies circuit design by reducing the quantity of external components and streamlining the manufacturing process. It is suitable for applica...
... performance requirements. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Type: PNP Silicon Epitaxial Planar Transistor Technical Specifications Model R1 (K)...
Product Overview PNP Silicon Epitaxial Planar Transistors designed for switching and interface circuit applications, as well as drive circuit applications. These transistors are housed in a SOT-23 plastic packa...
... for simplified circuit design and is available in various configurations to suit different application needs. The transistor is housed in a SOT-23 plastic package. Product Attributes Brand: Heyuan China Bas...
... Overview This NPN Silicon Epitaxial Planar Transistor is designed for switching and interface circuit applications, as well as drive circuits. Featuring built-in bias resistors, these transistors simplify c...
..., simplifying circuit design and reducing component count. Available in a SOT-23 plastic package, these transistors offer reliable performance for various electronic systems. Product Attributes Brand: Heyuan...
... of parts and manufacturing process steps. Product Attributes Brand: MMDTA (implied by model number) Type: PNP Silicon Epitaxial Planar Transistor Features:...
... electronic designs. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Type: PNP Silicon Epitaxial Planar Transistor Technical Specifications Model R1 (K) R2 (K) Base (Input)...