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Product Overview The TIP32 series are complementary PNP power transistors designed for medium power linear and switching applications. Packaged in a TO-220 case, these devices offer reliable performance for var...
Product Overview The TOSHIBA 2SA1298 is a silicon PNP epitaxial transistor manufactured using the PCT process. It is designed for low frequency power amplifier and power switching applications. Key advantages i...
...TOSHIBA 2SA1182 is a silicon PNP epitaxial transistor manufactured using the PCT process. It is designed for audio frequency low power amplifier applications, driver stage amplifier applications, and switchi...
Product Overview The Toshiba RN1501 to RN1506 series are NPN epitaxial silicon transistors utilizing a PCT Process. These devices are designed for switching, inverter circuits, interface circuits, and driver ci...
N-channel 800 V, 0.19 typ., 19.5 A MDmesh K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packages Applications Switching applications Description These very high voltage N-channel Power MOSFETs are...
BSZ0909NS MOSFET Power Electronics High Performance High-Efficiency Switching Transistors Features: - N-Channel MOSFET - Voltage: 100V - Drain Current: 6A - Rds(on): 0.36ohm - Package: TO-252 - Maximum Power Di...
IRF6638TRPBF MOSFET Power Electronic High Current Low Resistance Switching Transistor Features: • N-Channel MOSFET • Logic Level Gate Drive • 175°C Operating Temperature • +-20V Gate-Source Voltage • 30V ......
FDD86381-F085 MOSFET Power Electronics TO-252-3 Switching Transistor High Current High Voltage Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (......
Product Overview The MMBF4391L, MMBF4392L, and MMBF4393L are N-Channel JFET Switching Transistors designed for various applications requiring high-speed switching. These devices are Pb-Free, Halogen Free/BFR Fr...
...Switching Transistors designed for automotive and other applications requiring unique site and control change requirements. These devices are AECQ101 Qualified and PPAP Capable, and are PbFree, Halogen Free/...
6DI30A-120 NPN PNP Transistors 30A, 1200V, 6 CHANNEL, NPN, Si, POWER TRANSISTOR Electrical Characteristics Collector Current-Max (IC) 30A Collector-emitter Voltage-Max 1200V Configuration COMPLEX DC Current Gai...
SOT-23 Plastic-Encapsulate Transistors MMBTA56 TRANSISTOR (NPN) FEATURE l General Purpose Amplifier Applications Marking :2GM MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Col...
SOT-23 Plastic-Encapsulate Transistors MMBTA56 TRANSISTOR (NPN) FEATURE l General Purpose Amplifier Applications Marking :2GM MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Col...
Features Over temperature protection (with auto-restart) Short-circuit protection (current limit) Active clamp E.S.D protection Status feedback Open load detection Logic ground isolated from power...
Product Overview The DTC124EE is a digital transistor (NPN) featuring built-in bias resistors, simplifying inverter circuit configurations by eliminating the need for external input resistors. These thin-film r...
TO-220-3L Plastic-Encapsulate Transistors TIP41/41A/41B/41C TRANSISTOR (NPN) FEATURE Medium Power Linear Switching Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter TIP41 TIP41A TIP4...
TO-220-3L Plastic-Encapsulate Transistors TIP41/41A/41B/41C TRANSISTOR (NPN) FEATURE Medium Power Linear Switching Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter TIP41 TIP41A TIP4...
... Typical(Note 3) MSL1 Robust Package Design RoHS Compliant General Description The FDMS6681Z has been designed to minimize losses in load switch applications. Advancements in both silicon and...
PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings* TA = 25C unles...
...Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This design minimizes conduction losses, enhances switching performance, and improves avalanche energy. It is suitable for applic...