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...Power Supply: Meanwell; 5, Control System: Linsn,Nova etc. Description: 1. P4.81 SMD LED display has high resolution, suitable for outdoor LED screen use; 2. Both horizontal and vertical viewing angles are 1...
... Product Number SI2301CDS-T1-GE3 Description MOSFET P-CH 20V 3.1A SOT23-3 Detailed Description P-Channel 20 V 3.1A (Tc) 860mW (Ta), 1.6W (Tc) Surface Mount SOT-23-3 (TO...
Product Description Description Upper Antistatic TC canvas Lining Anti static Textile Colour White Size 35-46/48/50(EU)/ 5-11.5(US)/Other on request Application Pharmaceutical,Food,Electronics Antistatic TC can...
CSD16556Q5B Chipscomponent Electronic Components IC Chips Surface mount type N Channel 25 V 100A (Tc) 3.2W (Ta), 191W (Tc) 8-VSONP (5x6) Product description: ITEM VALUE D/C NEW Condition Original Package Origin...
tcs electronic platform weighing scale with printer Features: 1) Rectangular pipe mild steel welding structure, has high strength 2) Stainless-steel 304 platform (cover) 3) With OIML R60 approved load cells (ZE...
IRF8010PBF MOSFET Power Transistor High Speed Switching for High Power Applications Product Listing: IRF8010PBF MOSFET Features: 100V Drain-Source Breakdown Voltage 100V Maximum Drain-Source Voltage 500mA...
FDMS039N08B Power MOSFET Transistor High Performance Low On-Resistance Ultra-Low Gate Charge Robust Switching Operation FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80 V Cur...
Semiconductor FDMC86261P Ultra-Low On-Resistance Dual N-Channel MOSFET with High Current and Power Density Capabilities 150V FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150...
Power MOSFET NTMFS4C025NT1G for High-Performance Switching and Power Conversion Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id...
ON Semiconductor NTMFS4C55NT1G MOSFET Power Transistor 4A 55V N-Channel Ultra-Low On-Resistance FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain ...
FDN537N High-Performance N-Channel MOSFET Single POWERTRENCH 30 V 6.5 A 23 m Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25C 6.5A (Ta), 6.5A (Tc) Drive...
Product Listing: IRFH8324TRPBF, N-Channel Power MOSFET Product Parameters: VDSS: 30V RDS(on): 0.07 ID: 4.5A Package: SOT-223 VGS: 10V Qg: 7.5nC Qgs: 3.5nC Qgd: 4nC Ciss: 790pF Coss: 22pF Rg: 5.2 P...
Product Listing: BVSS84LT1G MOSFET Features: - N-Channel enhancement mode - Low gate charge - Fast switching - Low on-state resistance - RoHS compliant Specifications: - Drain Current: 8.4A - Drain-Source Volta...
Silicon NPN Power Transistors BD909 BD911 DESCRIPTION With TO-220C package Complement to type BD910 BD912 APPLICATIONS Intented for use in power linear and switching applications SYMBOL PARAMETER CONDITIO...
HUF75645P3, HUF75645S3S 75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs Features Ultra Low On-Resistance - rDS(ON) = 0.014, VGS = 10V Simulation Models - Temperature Compensated PSPICE and SABER ...
MJD340TF High Voltage Power Transistors D-PAK switching power mosfet High Voltage Power Transistors D-PAK for Surface Mount Applications Lead Formed for Surface Mount Applications (No Suffix) Straight Lead ...
SLA6020 PNP + NPN DarliCM GROUPon 3-phase motor drive testing power transistors Absolute maximum ratings Symbol Ratings Unit NPN PNP VCBO 100 100 V VCEO 100 100 V VEBO 6 6 V IC 5 5 A ICP 8 (PW1ms, Du50%) ...
SGP02N120, SGB02N120, SGD02N120 Fast S-IGBT in NPT-technology 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: - Motor controls - Inverter - SMPS NPT-Tec...
TIP120/121/122 Medium Power Linear Switching Applications Complementary to TIP125/126/127 NPN Epitaxial DarliCM GROUPon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Valu...
Silicon Controlled Rectifiers Features Sensitive gate trigger current: IGT=200uA maximum Low on-state voltage: VTM=1.2(typ.)@ ITM Low reverse and forward blocking current: IDRM/IPRM=100uA@TC=125 Low ho...