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... Attribute Value Manufacturer: Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 2.6 A Vds - Drain-Source Breakdown Voltage: - 500 mV, ......
... 50% lower Qrr than other MOSFET suppliers Lowers switching noise/EMI MSL1 robust package design 100% UIL tested RoHS Compliant General Description This N-Channel MV MOSFET is produced using Fairchild Semico...
Transistors SCT055HU65G3AG HU3PAK Automotive Grade SIC Power MOSFET Transistors Product Description Of SCT055HU65G3AG SCT055HU65G3AG is Automotive-grade silicon carbide Power MOSFET Transistors, 650V, 58mΩ typ...
...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an ex...
... is PG-TO252-3(Surface Mount). Specification Of IPD06P004N Part Number IPD06P004N FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C...
...MOSFET Transistors TO-247-4 Product Description Of MSC180SMA120B MSC180SMA120B is Silicon Carbide N-Channel Power MOSFET Transistors, 1200V, 180mΩ SiC MOSFET, package is TO-247-4. Specification Of MSC180SMA...
... to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is...
... to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is...
...MOSFET TRANSISTOR APT94N65B2C3G APT94N65B2C3G Microsemi Corporation (now Microchip) MOSFET N-CH 650V 94A T-MAX Product Technical Specifications Category Integrated Circuits (ICs) APT94N65B2C3G POWER MOSFET...
Power MOSFET FEATURES Dynamic dV/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs...
FDV305N 20V N-Channel PowerTrench MOSFET General Description This 20V N-Channel MOSFET uses Fairchilds high voltage PowerTrench process. It has been optimized for power management applications. Applications ...
Power MOSFET 200 mA, 50 V NChannel SOT23 Typical applications are DCDC converters, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless t...
SUD40N06-25L N-Channel 60-V (D-S), 175 MOSFET, Logic Level PRODUCT SUMMARY VDS (V) rDS(on) () ID (A)a 60 0.022 @ VGS = 10 V 30 0.025 @ VGS = 4.5 V 30 ABSOLUTE MAXIMUM RATINGS (TC=25 UNLESS OTHERWISE NOTED) P...
MOSFETs Silicon N-Channel MOS (DTMOS) TK10P60W Applications Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 (typ.) by used to Super Junction Structure : DTMOS (2) ...
IRFP260NPbF HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements L...
IRFR/U9120N HEXFET Power MOSFET Ultra Low On-Resistance P-Channel Surface Mount (IRFR9120N) Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Description ...
MOSFET N-CH 55V 110A TO-263 NP110N055PUG Product Description Packaging Tape & Reel (TR) Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Conti...
...MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate ...
AO3400A N-Channel Enhancement Mode Field Effect Transistor General Description The AO3400A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a ...