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Product Listing: GD25Q256DYIGR Flash Memory Chips Product Parameters: - Capacity: 256Mb - Operating Voltage: 2.7V to 3.6V - Read Speed: 80Mhz - Write Speed: 40Mhz - Access Time: 85ns - Package: 8-pin WSON - Ope...
...-10G Flash Memory Chips Product Features: - Capacity: 512Mbit - Voltage: 1.8V/3V/3.3V/5V - Operating Temperature: -40°C to +85°C - Endurance: 100,000 write/erase cycles - Data Retention: 10 years - Write Spe...
...Endurance: 10,000 Program/Erase Cycles • Data Retention: 20 years • Read Latency: 25ns • Write Latency: 85ns • Clock Frequency: 66MHz • Data Transfer Rate: 133MB/s • Bus Width: 8-bit Why ......
Product Listing: MX30UF4G18AB-XKI Flash Memory Chip Capacity: 4GB Organization: 8Mx32 Voltage: 1.8V Interface: ONFI 3.0 Package: 54-ball FBGA Read Speed: up to 133MB/s Write Speed: up to 40MB/s How to buy >>> ...
Flash Memory Chip W632GG6NB09J Product Features: 1. Capacity: 16GB 2. Type: NAND Flash 3. Speed: up to 866MB/s read and 621MB/s write 4. Low power consumption 5. High durability 6. Easy and reliable operation 7...
... Retention: 20 Years - Endurance: 100,000 Erase/Program Cycles - Page Size: 4KB - Read/Write Speed: 166MHz - Interface: 1.8V/3.3V - Packaging Type: Tray - RoHS Compliant: Yes Why buy from us >>> Fast / Safel...
...: MT46V32M16CY-5B IT:J Flash Memory Chips Specifications: - Capacity: 32Mbit (4M x 8bit) - Technology: CMOS - Organization: 4M x 8bit - Speed: 66MHz - Supply Voltage: 3.3V ± 0.3V - Operating Temperature: -40...
NAND512W3A2SN6E Flash Memory Chips Product Features: - Capacity: 512Mb - Package Type: TSOP48 - Voltage: 3V - NAND Flash Technology - Supports x8/x16 I/O - High-performance Read and Program Operations - Low Pow...
... from -40°C to 85°C - High speed read/write performance - Programmable instruction set for flexibility - Low power consumption for extended battery life - Durable and reliable construction - ......
Product Listing: MX25V5126FZUI Flash Memory Chips Parameters: - Capacity: 5Mb - Operating Voltage: 2.7V - 3.6V - Operating Temperature: -40C to 85C - Read/Write Speed: 66MHz - Flash Endurance: 100K Program/Er...
... - Read/Write Speed: 25MHz/25MHz - Endurance: 100,000 Program/Erase cycles - ECC: Built-in BCH ECC Why buy from us >>> ......
... Erase/Program Cycles • Endurance: 10,000 Program/Erase Cycles • Data Retention: 20 Years • Features: Fast Read and Program, Low Power, Enhanced Security,...
Product Listing: M25P16-VMF6TP TR Flash Memory Chips Specifications: Capacity: 16Mb Voltage: 2.7V to 3.6V Operating Temperature: -40C to +85C Read/Write Speed: 25MHz Package: 8-pin SOIC Endurance:...
Product Listing: MX25L3233FM1I-08G Flash Memory Chip Features: • Capacity: 8GB • Voltage: 2.7V to 3.6V • Supply Current: Active: 40mA; Standby: 0.1mA • Write/Erase Cycles: 100K • Read Speed: 80MHz • Operating T...
... S27KS0642GABHV023 Pseudo SRAM Memory IC 64Mbit HyperBus 200 MHz Product Description Of S27KS0642GABHV023 S27KS0642GABHV023's HYPERBUS™ is a low signal count, DDR interface, that achieves high-speed read and...
Electronic Integrated Circuits S80KS5122GABHV020 200 MHz 35NS 24-FBG Memory Product Description Of S80KS5122GABHV020 S80KS5122GABHV020's read or write transaction on HYPERBUS™ consists of a series of 16-bit wid...
Integrated Circuit Chip S70KS1282GABHB033 200 MHz Memory Surface Mount Product Description Of S70KS1282GABHB033 S70KS1282GABHB033's Read transactions can be specified to use either a wrapped or linear burst. Du...
IC Chip S80KS5123GABHA020 SPI - Octal I/O 200 MHz 35 ns 24-FBGA Memory IC Product Description Of S80KS5123GABHA020 S80KS5123GABHA020's Read transactions provide 16 bits of data during each clock cycle (8 bits o...
...Memory IC Product Description Of S27KS0642GABHB023 S27KS0642GABHB023's Clock can be stopped during any portion of the active transaction as long as it is in the LOW state. Specification Of S27KS0642GABHB023 ...
FLASH NOR Memory IC S26HS01GTFPBHV023 166MHz High Speed CMO 24-FBGA IC Chips Product Description Of S26HS01GTFPBHV023 S26HS01GTFPBHV023 The HYPERBUS™ interface (DDR) transfers two data bytes per clock cycle o...