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... interference immunity, and ensure stable signal reception and transmission across multiple bands. With a focus on performance, versatility, supply security, and quality, these transistors are ideal for next...
...transistor array designed for current mirror applications. It features a precision-matched transistor pair with a collector current difference of less than or equal to 10%, low collector-emitter saturation v...
... interference immunity, and ensure stable signal reception and transmission across multiple or specific bands. These transistors are crucial for enabling universal network availability and connectivity in an...
... BC857S are PNP Silicon AF Transistor Arrays designed for AF input stages and driver applications. They offer high current gain, low collector-emitter saturation voltage, and feature two internally isolated ...
... is an NPN Silicon AF Transistor Array designed for AF stages and driver applications. It features high current gain, low collector-emitter saturation voltage, and consists of two internally isolated NPN/PNP...
...Transistor 2SA940 The 2SA940 is a PNP power transistor designed for general-purpose power amplifier and vertical output applications. It offers a high collector-emitter breakdown voltage of -150V and a DC cu...
Infineon RF Transistors - 7th & 8th Generation Infineon's 7th and 8th generation RF transistors are discrete Heterojunction Bipolar Transistors (HBT) designed for complementary wireless solutions, offering robu...
...transistors designed for high DC current gain from 0.1 mA to 100 mA. They feature a low collector-emitter saturation voltage and are Pb-free (RoHS compliant) and qualified according to AEC Q101. The SMBT3904...
... Surface Mount Wideband Silicon NPN RF Bipolar Transistor The BFP420 is a low noise, grounded emitter (SIEGET) silicon NPN RF bipolar transistor from Infineon's fourth generation RF transistor family. With a...
... RF Transistors Infineon's RF transistors offer robust, flexible, and reliable solutions for complementary wireless applications. Designed for increasing data traffic and connectivity demands in mobile syste...
...bipolar junction transistor (BJT) designed for high collector current applications. It serves as a complementary component to the SS8050W transistor. This device is suitable for various electronic circuits r...
...a SOT-23 plastic-encapsulated NPN transistor from SHENZHEN JTD ELECTRONICS CO.,LTD. It features a collector current of 0.1A and is complementary to the 2SA812 transistor. This transistor is suitable for vari...
...s SOT-363 package contains two PNP transistors, offering a dual transistor configuration. It is designed to reduce component count and board space without mutual interference between the transistors. Suitabl...
...TRANSISTOR (NPN) The MMBT2222A is an NPN transistor featuring epitaxial planar die construction. It is designed for general-purpose applications and offers complementary PNP type availability (MMBT2907A). Th...
MMBT3904 NPN Transistor - SOT-23 Package The MMBT3904 is an NPN epitaxial planar die construction transistor in a SOT-23 package. It is designed for general-purpose applications and is recommended as a compleme...
...Transistor (PNP) The SS8550 is a PNP transistor designed for high collector current applications. It is complementary to the SS8050, offering a reliable component for various electronic circuits. Its key fea...
...transistor (BJT) designed for general-purpose applications. It features epitaxial planar die construction and is recommended as a complementary type to the NPN transistor MMBT3904. Its compact SOT-23 package...
...Transistor (NPN) The SS8050W is an NPN bipolar junction transistor, complementary to the SS8550W. It is designed for general-purpose applications and is marked with 'Y1'. Product Attributes Brand: JTD (SHENZ...
... bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It is complementary to the S8050 transistor and offers a continuous collector current of up to 0.5A. ...
MMBT2907A TRANSISTOR (PNP) The MMBT2907A is an epitaxial planar die construction PNP transistor. It offers a complementary NPN type, the MMBT2222A. This transistor is suitable for various electronic application...