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...140F,Standard rear casing can be matched for each volume control.“F”means program selection. Model:Y-120F/130F/140F Input capacity:10W/30W/60W Way:Transformer Attenuation steps:5 steps Switch:-- Box size(for...
...Volume control (Y-120FS/130FS/140FS ) Y-120FS/130FS/140FS,“FS”with program selection and 24V input. Specification: Model:Y-120FS/130FS/140FS Input capacity:10W/30W/60W Way:Transformer Attenuation steps:5 ste...
.../112FS/124FS/150FS/165FS) Y-106FS/112FS/124FS/150FS/165FS,With program selection and resistor. Model:Y-106FS/112FS/124FS/150FS/165FS Input capacity:6W/12W/24W/36W/50W Way:Transformer Attenuation steps:5 step...
... Time Setting 0s-99s,Continuously setting and manual Display LED Digital display The selected feature Fail alarm Power Requirements 220V±10%,50Hz±5% Operation Environment 0 C~40 C,≤85%RH Company introduction...
...IGBTs up to 1200V/1700V ●Half-bridge mode select,also two independent single drives ●Short circuit and over current protection by VCEsat monitoring ●Isolation due to nanometer amorphous transformer ●Supply u...
...-bridge mode select,also two independent single drives ●Short circuit and over current protection by VCEsat monitoring ●Realize voltage spike restrain by "voltage sensor". ●Isolation due to nanometer amorpho...
...IGBTs up to 1200V/1700V ● Half-bridge mode select,also two independent single drives ● Short circuit and over current protection by VCEsat monitoring ● Isolation due to nanometer amorphous transformer ● Supp...
... due to nanometer amorphous transformer ● Supply undervoltage protection (<12.5V) ● Error memory ● Error “soft turn-off” ● Driver interlock top/bottom in half-bridge mode ● ......
... up to 1200V/1700V ● Half-bridge mode select,also two independent single drives ● Short circuit and over current protection by VCEsat monitoring ● Isolation due to nanometer amorphous transformer ● Supply un...
... up to 1200V/1700V ● Half-bridge mode select,also two independent single drives ● Short circuit and over current protection by VCEsat monitoring ●Isolation due to nanometer amorphous transformer ● Supply und...
.../1700V ● Half-bridge mode select,also two independent single drives ● Short circuit and over current protection by VCEsat monitoring ● Isolation due to nanometer amorphous transformer ● Supply undervoltage p...
.../1700V ● Half-bridge mode select,also two independent single drives ● Short circuit and over current protection by VCEsat monitoring ● Isolation due to nanometer amorphous transformer ● Supply undervoltage p...
.../1700V ● Half-bridge mode select,also two independent single drives ● Short circuit and over current protection by VCEsat monitoring ● Isolation due to nanometer amorphous transformer ● Supply undervoltage p...
... up to 1200V/1700V ● Half-bridge mode select,also two independent single drives ● Short circuit and over current protection by VCEsat monitoring ● Isolation due to nanometer amorphous transformer ● Supply un...
...3300V dual IGBTs ● Half-bridge mode select,also two independent single drives ● Short circuit and over current protection by VCEsatmonitoring ● Isolation due to nanometer amorphous transformer ● Supply under...
...3300V dual IGBTs ● Half-bridge mode select,also two independent single drives ● Short circuit and over current protection by VCEsatmonitoring ● Isolation due to nanometer amorphous transformer ● Supply under...
...3300V dual IGBTs ● Half-bridge mode select,also two independent single drives ● Short circuit and over current protection by VCEsatmonitoring ● Isolation due to nanometer amorphous transformer ● Supply under...
...3300V dual IGBTs ● Half-bridge mode select,also two independent single drives ● Short circuit and over current protection by VCEsatmonitoring ● Isolation due to nanometer amorphous transformer ● Supply under...