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... (SMD) in plastic packages. These transistors offer high current capabilities, multiple current gain selections, and high power dissipation. Key features include an exposed ......
...) plastic package. These transistors are designed for high collector current capability, offering multiple current gain selections and a high power dissipation capability. They are ideal for ......
...Transistor The MMBTA42 is an NPN transistor in a SOT-23 package, designed for applications requiring a low collector-emitter saturation voltage and high breakdown voltage. It serves as a complementary part t...
..., this transistor pair offers low collector capacitance, low collector-emitter saturation voltage, and closely matched current gain. Its compact design reduces component count and board space, with no mutual...
...transistors designed for switching and amplification applications. These transistors are housed in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. They offer high current capability an...
...Transistor Product Overview The PBSS2515YPN is a low VCEsat NPN/PNP transistor pair designed for general-purpose switching and driver circuits. This device offers high current capability and a low collector-...
...PNP General-Purpose Transistors Product Overview The Nexperia BC856, BC857, and BC858 series are PNP general-purpose transistors housed in a compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic pack...
...1 A NPN Medium Power Transistors Product Overview The Nexperia BCP56 series comprises NPN medium power transistors designed for surface-mount applications. These transistors are housed in a SOT223 (SC-73) pl...
...NPN High Power Bipolar Transistor Product Overview The Nexperia MJD44H11A is a high-power NPN bipolar transistor designed for demanding applications. Encased in a compact DPAK (TO-252 / SOT428C) surface-moun...
...transistor designed for low current and low voltage applications. It is ideal for general-purpose switching and amplification, finding use in telephony and professional communication equipment. This transist...
... transistors designed for small Surface-Mounted Device (SMD) plastic packages. These fully isolated internal transistors offer precise current gain and base-emitter voltage matching, making them ideal drop-i...
...Transistor The BC847BS is an NPN epitaxial silicon planar design general purpose dual transistor designed for amplifier applications. It is lead-free and compliant with EU RoHS 2011/65/EU directive, utilizin...
..., lead-free in compliance with EU RoHS 2.0, and use a green molding compound as per IEC 61249 standard. These transistors are housed in a SOT-323 plastic package.Product Attributes Brand: Not specified Origi...
...transistor designed for switching applications. It offers a collector-emitter voltage of 40V and a collector current of 0.2A, making it suitable for various electronic circuits. This transistor comes in a co...
... it suitable for various electronic circuits. This transistor is housed in a compact SOT-323 package. Product Attributes Brand: Shanghai Siliup Semiconductor Technology Co. Ltd. Product Type: General Purpose...
..., making it suitable for various electronic circuits. This transistor is supplied in a compact SOT-323 package. Product Attributes Brand: Shanghai Siliup Semiconductor Technology Co. Ltd. Product Type: Gener...
...transistor designed for switching applications. It features a collector-emitter voltage of -40V and a collector current of -0.2A, making it suitable for various electronic circuits. This transistor is housed...
...transistor designed for various electronic applications. It offers a collector-emitter voltage of 40V and a collector current of 0.2A, making it suitable for switching operations. This transistor is housed i...
... of -0.2A, making it suitable for switching operations. This transistor is housed in a compact SOT-523 package. Product Attributes Brand: Shanghai Siliup Semiconductor Technology Co. Ltd. Product Type: Gener...
... capability of 5A, a low equivalent on-resistance with RSAT of 30m, and a low saturation voltage of VCE(SAT) < 65mV @ IC = 1A. The transistor also offers specified hFE up to 10A for high current gain hold-up...