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...amplifier board 1943+5200 high-power Toshiba transistor rear stage amplifier board. The board is a single channel rear amplifier board that requires dual channels. please buy 2 pieces, The circuit design use...
2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: IC = 15A. High Power Dissipation : 15...
2 × 6 W stereo power amplifier TDA1517; TDA1517P FEATURES • Requires very few external components • High output power • Fixed gain • Good ripple rejection • Mute/standby switch • AC and DC short-circuit safe to...
Multilayer RF Ro3003 Rogers PCB Power Amplifier Circuit Board Quick Detail : 1. Type : Pcb 2. Material : Rogers 3. Layer : Multilayer 4. Products Size :12*4 cm 5. Permittivity : 3 6. Surface finish : ......
OEM SMT PCB Assembly Audio Power Amplifier Circuit Board Assembly Features 1. One Stop OEM Service, Made in Shenzhen of China 2. Manufactured by Gerber File and BOM List from Customer 3. FR4 ......
..., Short-Circuit and Thermal Protection Mounting Type Through Hole Operating Temperature -20°C ~ 85°C (TA) Supplier Device Package TO-220-11 ......
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...Power Amplifier With TOSHIBA Power Transistors (MA-4400) Quick details: Atopt BIG TOSHIBA transistor, very perfect sound Efficent cooling system, ensure the power amplifier stability Classic products, good q...
...1800W popular sound system power amplifier for Touring performance, KTV room, Concert, Cinema Class TD Power Amplifier * Class TD circuit, 2 channel switching power amplifier. Provide 1800W * Use original Am...
...:Submit request for datasheets and more information. About GE Fanuc IC3600APAB1 The IC3600APAB1 is a power amplifying card produced by General Electric to be used in their Mark I and Mark II lines. The IC360...
... power amplifiers. FEATURES ●Suitable for use in driver stage of 50 to 100 W audio amplifiers and output stage of TV vertical deflection circuit. ●High Voltage and High fT VcEo = 120 V/160 V (2SC2690, 2SC269...
2SC1971 C1971 TO220 NPN epitaxial planar type transistor designed for RF power amplifiers Description: silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio appl...
... into an integrated circuit (IC) package. The capacitor is typically formed by etching metal plates on the surface of the IC, separated by a thin insulating layer. Integrated circuit capacitors are used in a...
SZHUASHI 100% New YP40601625T 30W 50V 5700- 5900MHz PA Power Amplifier RF Power Transistor with Standard Features Product Description The YP40601625T is a 30-watt, internally matched GaN HEMT, designed for mult...
... and light weight. The whole machine adopts high-precision, high consistency patch components, military level components, and the circuit board is designed with 4-layer circuit, which has strong anti-interfe...
.... With support for multiple frequency bands over 1000MHz bandwidth. Equipped with high power transistors circuits, this amplifier is capable of delivering a maximum output power of 50W, ensuring strong and r...
2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type Power Amplifier Applications FEATURES High transition frequency: fT = 200 MHz (typ.) Complementary to 2SA1930 Electrical Characteristics (Tc = 25C) Cha...