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...NPN - PNP transistors Bipolar Discrete Semiconductor Products Complementary power transistors Description: The devices are manufactured in planar technology with “base island” layout. The resulting transisto...
TO-220-3L Plastic - Encapsulated Transistors TIP117 DARLINGTON TRANSISTOR (NPN) FEATURE High DC Current Gain Low Collector-Emitter Saturation Voltage Complementary to TIP112 MAXIMUM RATINGS (Ta=25℃ unless other...
TO-220-3L Plastic - Encapsulated Transistors TIP117 DARLINGTON TRANSISTOR (NPN) FEATURE High DC Current Gain Low Collector-Emitter Saturation Voltage Complementary to TIP112 MAXIMUM RATINGS (Ta=25℃ unless other...
12-30v, 24v NPN PNP Intelligent OLED Electronic Digital Pressure Switch Description SPS is a pressure transmitter with a pressure switch to safely and absolutely measure and monitor gauge pressures. It is highl...
...NPN Input Public Terminal Isolated Parameter: Display Dimension 134*102*34mm Cutout size 120*94mm Type 4.3"TFT Feature 60K-color resistive touch screen, supports portrait display Memory RAM 64MB ROM NOR Flas...
...Switches and Sensors for CNC Machinery and equipment for all your Contact Switches and Contact Switch Components needs. Product Paramenters Supply Voltage DC5~24V Stroke 1.5mm Operating force 0.4N Work point...
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 ...
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 ...
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 ...
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 ...
... of the popular NJW3281G and NJW1302G audio output transistors. With superior gain linearity and safe operating area performance, these transistors are ideal for high fidelity audio amplifier output stages a...
Product Description Packaging Bulk Part Status Obsolete Transistor Type NPN Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 160V Vce Saturation (Max) @ Ib, ......
Product Description Manufacturer Toshiba Semiconductor and Storage Part Status Active Transistor Type NPN Current - Collector (Ic) (Max) 150mA Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max...
Product Description Manufacturer CJ Packaging Tape & Reel (TR) Part Status Active Transistor Type NPN Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ ...
Product Description The PS2501A-1 and PS2501AL-1 are high isolation voltage single transistor type optically coupled isolators. They integrate a GaAs light emitting diode with an NPN silicon phototransistor, of...
...PS2501L-1, -4 High Isolation Voltage Single Transistor Type Optically Coupled Isolators The PS2501-1, -4 and PS2501L-1, -4 are optically coupled isolators featuring a GaAs light emitting diode and an NPN sil...
Silicon SMD Transistor PNP Surface Mount Transistor MMBT3906 SOT-23 MMBT3906 SOT-23 PNP Surface Mount Transistor MMBT3906 SOT-23 Datasheet.pdf FEATURES Complementary Type The NPN Transistor MMBT3904 is Recommen...
PRODUCT DESCRIPTION 8542.39.0001 Triode NPN PNP Transistor Circuit Protection TPD2S300YFFR NPN PNP Transistor Texas Instruments/TI TPD2S300YFFR ECAD Module PCB Symbol,Footprint & 3D Model Supply and Demand Stat...
... Breakdown Voltage: 30 V Id - Continuous Drain Current: 40 A Fall Time: 2.4 Ns Transistor Type: 1 N-Channel Rds On - Drain-Source Resistance: 7.3 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - ......