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HMI PLC All In One MOS Tube Digital Output Max 4AI/2AO Type-C HMI Download Port Naming rules 1. Series QM3G: QM3G-FH series 2. HMI 43FH: 4.3inch 50FH: 5inch 70FH/70HD/70KFH: 7inch 100FH: 10inch 3. Digital input...
FGH40N60SFD Igbt Transistors 600V 40A Field Stop Transistor TO-247-3 290W Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for ...
SI4463-C2A-GMR RF Power Transistors Product Description: The SI4463-C2A-GMR RF Power Transistors are designed for use in high-efficiency, high-power wireless applications. These transistors are capable of produ...
HMC326MS8GETR RF Power Transistor - High Power High Linearity HMC326MS8GETR, GaAs pHEMT, RF Power Transistor Product Description: The HMC326MS8GETR is a high-performance, GaAs pHEMT, RF power transistor. It is ...
...NPN INPUT ETHERNET PORT Coolmay HMI/PLC all-in-one machine has innovatively realized the high integration of HMI and PLC switch, analog and temperature in hardware. It can be used in various occasions requir...
Features Low current (max. 100 mA). Low voltage (max. 65 V). Absolute Maximum Ratings Ta = 25C Parameter Symbol BC846 BC847 BC848 Unit Collector-base voltage VCBO 80 50 30 V Collector-emitter voltage VCEO ...
STOCK List LD1117DT18CTR 3200 ST 15+ SOT-252 LF347DR 3200 TI 16+ SOP LM1117MPX-ADJ 3200 NS 15+ SOT223 LM2679S-ADJ 3200 NS 12+ TO-263 LMV339MT 3200 NS 16+ TSSOP-14 PE-65508 3200 PULSE 12+ SOP SN74LVT16245BDGGR 3...
Part Number: AOTF14N50 Description: MOSFET N-CH 500V 14A TO220F Category: Discrete Semiconductor Products>>FETs - Single Packaging:Tube FET Type:N-Channel Technology:MOSFET (Metal Oxide) Drain to Source Voltage...
Package 4P DIP Output Type DC Number of Channels per Chip 1 Typical Forward Voltage 1.2 V Maximum Collector Current 50 mA Maximum Collector Emitter Voltage 35 V Maximum Rise Time 18 us Maximum Forward Voltage 1...
...-Series Transistor Output Unit Product Description I/O SYSTEM CJ I/O Bus EXPANSION UNIT TYPE Basic I/O Unit TYPE OF MODULE Digital I/O NUMBER OF DIGITAL INPUTS 0 DIGITAL INPUT TYPE None NUMBER OF DIGITAL OUT...
BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier at 1.8 GHz • Outstanding Gms = 21.5 dB Noise Figure F = 0.9 dB • Gold metallization for ......
ULN2803APG,ULN2803AFWG,ULN2804APG,ULN2804AFWG (Manufactured by Toshiba Malaysia) The ULN2803APG / AFWG Series are highvoltage, highcurrent darliCM GROUPon drivers comprised of eight NPN darliCM GROUPon pairs....
PNP GENERAL PURPOSE TRANSISTORS FEATURES General Purpose Amplifier Applications NPN Epitaxial Silicon, Planar Design Collector Current IC = -100mA Complimentary (PNP) Devices : BC846/BC847/BC848/BC849 ......
...ordering information The ULN2001A, ULN2002A, ULN2003A, ULN2004A, ULQ2003A, and ULQ2004A are high-voltage, high-current DarliCM GROUPon transistor arrays. Each consists of seven npn DarliCM GROUPon pairs that...
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 ...
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 ...
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 ...
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 ...
...Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to m...