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...Silicon Epitaxial Wafer Substrate Thickness 290±20µm / Resistivity 0.008-0.025Ωcm , Epi Layer Thickness 10-15μm PAM-XIAMEN custom epitaxial or EPI wafer services on silicon wafers for research and developmen...
...Silicon Epitaxial Wafer Substrate Thickness 525 ± 25µm / Resistivity 0.002 - 0.003Ωcm , 2 Epitaxial Layers PAM-XIAMEN custom epitaxial or EPI wafer services on silicon wafers for research and development or ...
...) ZMSH is an agent of GaN-on-Si epitaxial wafers in Shanghia. Gallium nitride (GaN) has been widely used in power devices and blue light-emitting diodes due to its wide energy gap. ......
4H SiC Seed Wafer Thickness 600±50μm Customization Silicon carbide growth Description of SiC Seed Wafer: SiC seed crystal is actually a small crystal with the same crystal orientation as the desired crystal, w...
...wafer CZ 200mm Prime Grade Silicon Wafer , SSP,DSP P type,B dopant,for semiconducter matrial Product Introduction: 8-Inch (200mm) Prime Grade Silicon Wafer Silicon wafers serve as the cornerstone of the semi...
...Silicon Carbide substrates for semiconductor device, customized thickness 4inch 4H-N silicon carbide crystal sic wafers for 4inch seed crystal grade; Silicon Carbide SiC crystal substrate wafer carborundum S...
High purity un-doped 4inch 4H-Semi silicon carbide sic wafers for optical lens or device Silicon Carbide SiC crystal substrate wafer carborundum SILICON CARBIDE MATERIAL PROPERTIES Product Name: Silicon carbide...
... 2" 3" 4" 6" 4h-Semi 4H-N Insulating Sic substrate Silicon Carbide sic wafer Silicon Carbide SiC crystal substrate wafer carborundum SILICON CARBIDE MATERIAL PROPERTIES Product Name: Silicon carbide (SiC) cr...
...Silicon Wafer With Insulating Thermal Oxidation Film Thickness 300nm 4" PAM-XIAMEN offer silicon dioxide wafer (Thermal Oxide (SiO2) on Silicon Wafers) size from 2” to 6” taken place from 850°C up to 1200°C ...
...Silicon Wafer With 200A Thermal Oxide And 1200A Lpcvd Nitride Stoichiometric 6" PAM-XIAMEN offer silicon dioxide wafer (Thermal Oxide (SiO2) on Silicon Wafers) size from 2” to 6” taken place from 850°C up t...
...Silicon Wafer CZ N Type Phosphorus Doped Orientation 100 Test Grade 4" Test Wafer PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the silicon substrate to compound semiconduc...
8inch sillicon wafer sillicon optical lens IC sillicon substrates sillicon ingots poly sillicon wafer 1. Specification Diameter (mm) 50.8 76.2 100 125 150 200 Growth Method MCZ Type Dopant N: Arsenic / Antimony...
Single Group Silicon Wafer Cleaning With Perfect Performance Price Ratio Silicon Wafer Cleaning brief introduction This is patent products for degreasing electron level and solar grade silicon slice in IT and s...
...Wafer Manufacturer 4 inch P Grade SiC Wafer Factory Homray Material Technology offers silicon carbide SiC n-type and p-tpye epitaxial wafer. SiC epi wafer is mainly used for Schottky diodes, metal-oxiHomray ...
6H-N Semi-insulating SiC substarte/wafer for MOSFETs,JFETs BJTs,high resistivity wide bandgap Semi-insulating SiC substarte/wafer's abstract Semi-insulating silicon carbide (SiC) substrates/wafers have emerged ...
4H/6H P-Type sic wafer 4inch 6inch Z grade P grade D grade Off axis: 2.0°-4.0°toward P-type doping 4H/6H P-Type sic wafer's abstract 4H and 6H P-type silicon carbide (SiC) wafers are critical materials in advan...
SiC Substrate & Epi-wafer Product Portfolio Brief We offer a comprehensive portfolio of high-quality silicon carbide (SiC) substrates and wafers, covering multiple polytypes and doping types (including 4H-N ...
...Wafer / 25pcs Carrier Box - including Container/4inch square wafers cassette box 6inch pp single wafer carrier container box cassette box for semi wafer package Canister Single Wafer Carrier Case Polypropyle...
4inch prime sillicon wafer, sillicon optical lens, IC sillicon substrates , poly sillicon wafer 1. About our company SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of Chi...
Product Description: IC Silicon Wafers are 8-inch diameter substrates used for semiconductor devices with a wide range of applications. It is made of high-purity silicon with various thicknesses of 0.28/ 0.35/ ...