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What Is A Random Access Memory

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Total 250 products for what is a random access memory Manufacture & Suppliers

32 Bit CPU Smart Card Chip Supporting Random Number and 7816 Interface with 400KHZ Support 152KB EEPROM

... random number generation, in line with AIS31-P2 standard, ensuring that all transactions and information exchange are secure and protected. Memory security protection mechanism is a key feature of this Smar...

Wisecard Technology Co., Ltd.
Guangdong,China

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Random Number Supported NFC Metal Cards Security Algorithm In Line With AIS31-P2 Standard

Product Description: The Smart Card product is a cutting-edge solution designed to meet a wide range of security and memory storage needs. With a main frequency of 72 MHz, this card offers high performance and ...

Wisecard Technology Co., Ltd.
Guangdong,China

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FM25V01A-GTR Integrated Circuit Chip High Performance Memory Chip Capacity

... - High Performance Memory Chip Capacity Product Listing: Product Name: FM25V01A-GTR Integrated Circuit IC Chip Product Features: - Low-power serial F-RAM nonvolatile memory - 256 Kbit (32 Kbyte) of nonvolat...

Shenzhen Sai Collie Technology Co., Ltd.
China

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1Gb SPI NAND Flash Memory 3V 104MHz WSON-8 MX35LF1GE4AB-Z4I

3V 1Gb-bit Serial NAND Flash Memory MX35LF1GE4AB-Z4I 1. FEATURES 1Gb SLC NAND Flash Bus: x4 Page size: (2048+64) byte Block size: (128K+4K) byte Fast Read Access Supports Random data read out by x1 x2 & x4 mode...

Shenzhen Filetti Technology Co., LTD
China

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32-bit CPU Magnetic Swipe Cards With 152KB EEPROM And Enhanced Memory Security Protection

Product Description: Our Smart Card is equipped with a powerful 32-bit CPU that delivers lightning-fast processing speeds. This ensures that you can quickly and easily access your information without any delays...

Wisecard Technology Co., Ltd.
Guangdong,China

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32 Bit Smart Card Chip Security Algorithm Number Supports True Random Number

Product Description: Featuring 2*16/32 Bit Timer and a 32-bit CPU, the Smart Card is able to deliver fast and efficient performance, making it ideal for use in a variety of applications. Additionally, the card ...

Wisecard Technology Co., Ltd.
Guangdong,China

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IS41LV16100B-50KL IC DRAM 16MBIT PARALLEL 42SOJ ISSI, Integrated Silicon Solution Inc

...048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row wit...

Sanhuang electronics (Hong Kong) Co., Limited
China

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IS41LV16100B-60KL- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

... is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single r...

Mega Source Elec.Limited
China

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IS41LV8205-60J - Integrated Silicon Solution, Inc - 2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

...097,152 x 8-bit high-performance CMOS Dynamic Random Access Memory. The Fast Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20ns per 4-bit word. These features ...

Mega Source Elec.Limited
China

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MX29F400CTMI-90G IC FLASH 4MBIT PARALLEL 44SOP Macronix

... and reliable read/write non-volatile random access memory. The MX29F400C T/B is packaged in 44-pin SOP, 48-pin TSOP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers. ...

Sanhuang electronics (Hong Kong) Co., Limited
China

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GE Fanuc PLC IC752SPL014 QuickPanel Module

... Memory (DRAM) is split between the operating system, an object store, and application memory. Additionally, a section of Non-volatile Random Access Flash Memory (NOVRAM), functioning as a virtual hard drive...

TLU Technology Co., LTD
Fujian,China

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MT48LC2M32B2P-6:G TR IC DRAM 64MBIT PAR 86TSOP II Micron Technology Inc.

..., CLK). Each of the 16,777,216-bit banks is organized as 2,048 rows by 256 columns by 32 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a...

Sanhuang electronics (Hong Kong) Co., Limited
China

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K6R4016v1C-TI10- Samsung semiconductor - 256Kx16 Bit High Speed Static RAM(3.3V Operating)

...Random Access Memory organized as 262,144 words by 16 bits. The K6R4016V1C uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Als...

Mega Source Elec.Limited
China

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MX29GL320EHT2I-70G IC FLASH 32MBIT PARALLEL 56TSOP Macronix

... GENERAL DESCRIPTION The MX29F080 is a 8-mega bit Flash memory organized as 1024K bytes of 8 bits. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory...

Sanhuang electronics (Hong Kong) Co., Limited
China

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FM24CL16B-GTR IC FRAM 16KBIT I2C 1MHZ 8SOIC Infineon Technologies

...memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years whil...

Sanhuang electronics (Hong Kong) Co., Limited
China

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MX29GL256FHXFI-90Q IC FLSH 256MBIT PARALLEL 64LFBGA Macronix

... GENERAL DESCRIPTION The MX29F080 is a 8-mega bit Flash memory organized as 1024K bytes of 8 bits. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory...

Sanhuang electronics (Hong Kong) Co., Limited
China

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BS62LV1027PCP70- Brilliance Semiconductor - Very Low Power/Voltage CMOS SRAM

...Random Access Memory organized as 131,072 words by 8 bits and operates from a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power ...

Mega Source Elec.Limited
China

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IS42S16400J-7TL IC DRAM 64MBIT PAR 54TSOP II ISSI, Integrated Silicon Solution Inc

Product Details Description The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM wit...

Sanhuang electronics (Hong Kong) Co., Limited
China

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IS41LV8205-60J - Integrated Silicon Solution, Inc - 2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

...097,152 x 8-bit high-performance CMOS Dynamic Random Access Memory. The Fast Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20ns per 4-bit word. These features ...

Mega Source Elec.Limited
China

Verified Supplier

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AS4C1M16E5-50JC - Alliance Semiconductor Corporation - 5V 1M×16 CMOS DRAM (EDO)

..., extremely low power and wide operating margins at component and system levels. The Alliance 16Mb DRAM family is optimized for use as main memory in...

Mega Source Elec.Limited
China

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