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BLF178XR RF Mosfet LDMOS (Dual), Common Source 50V 40mA 108MHz 28dB 1400W SOT539A 1. 1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to...
RD100HHF1 MOSFET type transistor specifically designed for HF High power amplifiers applications FEATURES High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz High Efficiency: 60%typ.on HF Band...
SIC Integrated Circuit Chip SCTWA70N120G2V Single FETs MOSFETs TO-247-4 Transistors Product Description Of SCTWA70N120G2V SCTWA70N120G2V is N-Channel Single FETs MOSFETs Transistors, Extremely low gate charge ...
...Transistor IRF9530PBF -100V -14A 200 MOhms 1 P-Channel 38.7 NC Applications Increased ruggedness Wide availability from distribution partners Industry standard qualification High performance in low frequency...
Vishay IRF740PBF Npn And Pnp Transistor 400V 10A Power MOSFET 125W 550 MOhms Description Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized d...
...-of-the-art single epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the RDS(on) makes it possible to...
...MOSFET Power Transistor High Power High Efficiency Low On Resistance Parameters: - Drain Source Voltage (VDS): 600V - Drain Current (ID): 24A - Gate Source Voltage (VGS): ±20V - Power Dissipation (PD): 150W ...
650V Transistors IMW65R057M1H N-Channel Silicon Carbide MOSFETs TO-247-3 Single FETs Product Description Of IMW65R057M1H IMW65R057M1H is 650 V 35A (Tc) 133W (Tc) N-Channel MOSFETs Transistors, Through Hole, Op...
N-Channel Transistors SCT4026DW7HRTL Integrated Circuit Chip TO-263-7L SiC Power MOSFET Product Description Of SCT4026DW7HRTL SCT4026DW7HRTL is Low on-resistance Automotive Grade N-channel SiC power MOSFET Tra...
BLF178XR RF Mosfet LDMOS (Dual), Common Source 50V 40mA 108MHz 28dB 1400W SOT539A 1. 1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to...
BLF174XR RF Mosfet LDMOS (Dual), Common Source 50V 100mA 108MHz 28.5dB 600W SOT1214A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band Feature 1, ...
MRF6V2150NBR1 RF Power Transistors N-Channel Enhancement-Mode Lateral MOSFETs Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Qualified Up to a Maximum of 50 VDD Operation •...
RD100HHF1 MOSFET type transistor specifically designed for HF High power amplifiers applications FEATURES High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz High Efficiency: 60%typ.on HF Band...
... •Simple drive requirements •Material categorization: for definitions of compliance DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ru...
...best price . Thank you ! category Discrete semiconductor products transistor FET, MOSFET single FET, MOSFET manufacturer Infineon Technologies series OptiMOS™-5 FET type N-channel technology MOSFET (metal ox...
RD06HVF1 RF POWER MOSFET Silicon Transistor 175MHz 6W for amplifiers applications Description of RD06HVF1 RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications FEA...
...220-3, Through Hole. Specification Of IPP65R050CFD7A Part Number IPP65R050CFD7A FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650 V Current - Continuous Drain (Id) @ 25°C ...
RD06HVF1 RF POWER MOSFET Silicon Transistor 175MHz 6W for amplifiers applications Description of RD06HVF1 RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications FEA...
10G03S 30V N+P-Channel Enhancement Mode MOSFET Description The 10G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shi...
HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscomplementary N and P channel MOSFET configurationis ideal for low I...