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...)= 4.0V (max) [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. MG75Q1JS43 Manufacturer TOSHIBA supply ability 10000 datecode 10+ package MODULE remark new and...
...)= 4.0V (max) [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. MG75Q2YS40 Manufacturer TOSHIBA supply ability 10000 datecode 10+ package MODULE remark new and...
...)= 4.0V (max) [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. MG75Q2YS42 Manufacturer TOSHIBA supply ability 10000 datecode 10+ package MODULE remark new and...
...)= 4.0V (max) [1]Enhancement-mode [1]The electrodes are isolated from case. Specifications: part no. MG75Q2YS44 Manufacturer TOSHIBA supply ability 10000 datecode 10+ package MODULE remark new and...
...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low satura...
...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low satura...
...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low satura...
...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low satura...
...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low satura...
...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low satura...
...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low satura...
...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low satura...
...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low satura...
...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low satura...
...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High spee : tf = 0.35µs (max) trr = 0.15µs (max) [1]Low satura...
...) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case. Specifications: part no. MG150Q1JS43 Manufacturer TOSHIBA supply ability 10000 datecode 10+ package MODULE remark new and...
...) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case. Specifications: part no. MG150Q1JS65H Manufacturer TOSHIBA supply ability 10000 datecode 10+ package MODULE remark new and...
...) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case. Specifications: part no. MG150Q1JS65HA Manufacturer TOSHIBA supply ability 10000 datecode 10+ package MODULE remark new and...
...Module Silicon N Channel IGBT Description: High Power & High Speed Switching Applications Applications: [1] High input impedance [1] Enhancement-mode [1] The electrodes are isolated from case. Specifications...
...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]The electrodes are isolated from case [1]High input impedance [1]Enhancement-mode [1]H...