| Sign In | Join Free | My burrillandco.com |
|
... and commercial equipment. It offers specific electrical characteristics, including a drain-source breakdown voltage of -20V and a continuous drain current of -2.8A. This device is suitable for applications ...
...an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It offers a high breakdown voltage of 80V and a continuous drain current of 100A, with a low...
...density N-channel MOSFET designed for efficient power management. It features an ultra-low RDS(ON) with a high breakdown voltage of 100V and a continuous drain current of 3A. This MOSFET is characterized by ...
... hFE (DC current gain), and high breakdown voltage. This transistor is ideal for circuits requiring amplification with minimal signal degradation. Product Attributes Brand: KTC (implied by model number) ......
... for low-noise audio amplifier applications, offering low noise, high DC current gain, and high breakdown voltage. The transistor is available in different hFE classifications (GR and BL) for specific gain r...
...a Silicon NPN transistor housed in a SOT-23 plastic package. It features high Emitter-Base reverse breakdown voltage, high reverse current gain (hFE), and low on-resistance. This transistor is specifically d...
Product Overview The 2SB1260 is a Silicon PNP transistor designed for general power amplifier applications. It features high breakdown voltage, good hFE linearity, and low VCE(sat), making it a complementary pa...
... designed for low-noise audio amplifier applications. It features high DC current gain, high breakdown voltage, and a TO-92 plastic package. This transistor is ideal for audio amplification circuits requirin...
Product Overview This NPN plastic-encapsulated transistor features a small flat package, high breakdown voltage, and excellent DC current gain linearity. It is suitable for applications requiring reliable perfo...
... functionality to the BC817W. Key electrical characteristics include a collector-emitter breakdown voltage of -45V and a DC current gain (hFE) ranging from 100 to 600 depending on the specific rank. This tra...
SuperTransistor MMBT5401 The MMBT5401 is a PNP transistor designed for switching applications. It offers a high breakdown voltage of -160V and a continuous collector current of -600mA, making it suitable for va...
... devices in complementary general-purpose amplifier applications. It offers a Collector-Emitter Breakdown Voltage of -80V and a minimum DC Current Gain of 750 at IC= -1.5 A. This transistor is a complement t...
... as output devices in complementary general-purpose amplifier applications. It offers a collector-emitter breakdown voltage of 60V and a minimum DC current gain (hFE) of 750 at 1.5A, making it suitable for r...
...a Silicon PNP Power Transistor from ISC, designed for power amplifier applications. It features a collector-emitter breakdown voltage of -50V, good linearity of hFE, and is a complement to type 2SC4935. Its ...
...use as output devices in complementary general-purpose amplifier applications. It offers a Collector-Emitter Breakdown Voltage of -60V and a minimum DC Current Gain (hFE) of 750 @ IC= -1.5 A. This transistor...
...2SD1402 is a Silicon NPN Power Transistor designed for color TV horizontal output applications. It features a high breakdown voltage of 1500V (Min), high switching speed, and minimum lot-to-lot variations fo...
Product Overview The 3DD4251T is a high-performance semiconductor device designed for various power applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliab...
... Voltage of 120V (Min.), ensuring robust device performance and reliable operation with minimum lot-to-lot variations.Product Attributes Brand: ......
...Semiconductor 2SC2233 is a silicon NPN power transistor designed for high-performance applications. It features a high collector-emitter breakdown voltage of 60V(Min) and a DC current gain of 30(Min) at VCE=...
...vertical output applications. It features a wide area of safe operation, a collector-emitter breakdown voltage of 150V (Min), and serves as a complement to the 2SA940 type. The device offers minimum lot-to-l...