IPD50R380CEAUMA1 MOSFET Power
Electronics Ultra Low RDS on High Power and High Reliability
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | | |
Rds On (Max) @ Id, Vgs | | |
Vgs(th) (Max) @ Id | | |
Gate Charge (Qg) (Max) @ Vgs | | |
Vgs (Max) | | |
Input Capacitance (Ciss) (Max) @ Vds | | |
FET Feature | | |
Power Dissipation (Max) | | |
Operating Temperature | | |
Mounting Type | | |
Supplier Device Package | | |
Package / Case | |
Description:
The IPD50R380CEAUMA1 is a N-Channel MOSFET from Infineon
Technologies. This device is designed for applications requiring
high voltage and fast switching. This device is designed to provide
low on-resistance, low gate charge, and high current capabilities.
Features:
• Low on-resistance: RDS(on) = 0.37Ω
• Low gate charge: Qg = 3.2nC
• High current handling: Id = 38A
• High voltage capability: Vds = 500V
• Pin compatible with standard packages
• RoHS compliant
• Halogen Free
• MSL 2
• Lead free
• ESD protection
• AEC-Q101 qualified
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