IPB042N10N3GATMA1 MOSFET Power Electronics High Power Low On Resistance Ideal
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | | |
Rds On (Max) @ Id, Vgs | | |
Vgs(th) (Max) @ Id | | |
Gate Charge (Qg) (Max) @ Vgs | | |
Vgs (Max) | | |
Input Capacitance (Ciss) (Max) @ Vds | | |
FET Feature | | |
Power Dissipation (Max) | | |
Operating Temperature | | |
Mounting Type | | |
Supplier Device Package | | |
Package / Case | |
IPB042N10N3GATMA1 MOSFET
This IPB042N10N3GATMA1 MOSFET is a N-channel enhancement mode power
field effect transistor designed for high voltage, high speed
switching applications. It is produced using the advanced Field
Stop IGBT Technology. This device features low on-state resistance
and fast switching times.
Features:
- N-Channel Enhancement Mode
- High Voltage and Speed Switching
- Low On-State Resistance
- Fast Switching Times
- Advanced Field Stop IGBT Technology
- RoHS Compliant
Specifications:
- Drain-Source Voltage: 600V
- Continuous Drain Current: 42A
- Drain-Source On-State Resistance: 0.042Ω
- Operating Temperature Range: -55°C to 175°C
- Package: TO-220
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