IRLB3813PBF MOSFET Power Electronics
High Performanc Fast Switching Low Loss Power Conversion
Product Listing:
Product Name: IRLB3813PBF MOSFET Transistor
Description: The IRLB3813PBF is a N-Channel Power MOSFET transistor
from Infineon Technologies. It is constructed from a
high-performance trench MOSFET, and is suitable for a wide range of
power switching applications. The device features an efficient low
RDS(on) and low gate charge to reduce power losses in the system.
Parameters:
• RDS(on): 8.3mΩ (max) @ VGS = 10V
• Gate Threshold Voltage: 2.5V (max)
• Continuous Drain Current: 25A (max) @ Tc = 25°C
• Drain Source Voltage: 55V (max)
• Operating Temperature Range: -55°C to 150°C
• Pb-Free and RoHS Compliant
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