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FQD17P06TM MOSFET Power Electronics P-Channel QFET -60 V -12 A 135 mΩ

    Buy cheap FQD17P06TM  MOSFET Power Electronics  P-Channel QFET -60 V  -12 A 135 mΩ from wholesalers
     
    Buy cheap FQD17P06TM  MOSFET Power Electronics  P-Channel QFET -60 V  -12 A 135 mΩ from wholesalers
    • Buy cheap FQD17P06TM  MOSFET Power Electronics  P-Channel QFET -60 V  -12 A 135 mΩ from wholesalers

    FQD17P06TM MOSFET Power Electronics P-Channel QFET -60 V -12 A 135 mΩ

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    Brand Name : onsemi
    Model Number : FQD17P06TM
    Price : Negotiable
    Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 999999
    Delivery Time : 1-3 days
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    FQD17P06TM MOSFET Power Electronics P-Channel QFET -60 V -12 A 135 mΩ

    N-Channel PowerTrench

    P-Channel QFET® MOSFETFQD17P06TM MOSFET Power Electronics P-Channel QFET -60 V -12 A 135 mΩ
    -60 V, -12 A, 135
    FET Type
    Technology
    MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss)
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    10V
    Rds On (Max) @ Id, Vgs
    135mOhm @ 6A, 10V
    Vgs(th) (Max) @ Id
    4V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs
    27 nC @ 10 V
    Vgs (Max)
    ±25V
    Input Capacitance (Ciss) (Max) @ Vds
    900 pF @ 25 V
    FET Feature
    -
    Power Dissipation (Max)
    2.5W (Ta), 44W (Tc)
    Operating Temperature
    -55°C ~ 150°C (TJ)
    Mounting Type
    Supplier Device Package
    TO-252AA
    Package / Case

    Description

    This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especiallytailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor
    control, and variable switching power applications.


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