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Power MOSFET FDB024N08BL7 for High-Efficiency Power Electronics Applications Single N-Channel PQFN8 120 V 4.0 m 11

    Buy cheap Power MOSFET FDB024N08BL7 for High-Efficiency Power Electronics Applications  Single  N-Channel  PQFN8  120 V  4.0 m 11 from wholesalers
     
    Buy cheap Power MOSFET FDB024N08BL7 for High-Efficiency Power Electronics Applications  Single  N-Channel  PQFN8  120 V  4.0 m 11 from wholesalers
    • Buy cheap Power MOSFET FDB024N08BL7 for High-Efficiency Power Electronics Applications  Single  N-Channel  PQFN8  120 V  4.0 m 11 from wholesalers
    • Buy cheap Power MOSFET FDB024N08BL7 for High-Efficiency Power Electronics Applications  Single  N-Channel  PQFN8  120 V  4.0 m 11 from wholesalers

    Power MOSFET FDB024N08BL7 for High-Efficiency Power Electronics Applications Single N-Channel PQFN8 120 V 4.0 m 11

    Ask Lasest Price
    Brand Name : onsemi
    Model Number : FDB024N08BL7
    Price : Negotiable
    Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 999999
    Delivery Time : 1-3 days
    • Product Details
    • Company Profile

    Power MOSFET FDB024N08BL7 for High-Efficiency Power Electronics Applications Single N-Channel PQFN8 120 V 4.0 m 11

    Power MOSFET FDB024N08BL7 for High-Efficiency Power Electronics Applications Single N-Channel PQFN8 120 V 4.0 m 114 A


    FET Type
    Technology
    MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss)
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    10V
    Rds On (Max) @ Id, Vgs
    2.4mOhm @ 100A, 10V
    Vgs(th) (Max) @ Id
    4.5V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs
    178 nC @ 10 V
    Vgs (Max)
    ±20V
    Input Capacitance (Ciss) (Max) @ Vds
    13530 pF @ 40 V
    FET Feature
    -
    Power Dissipation (Max)
    246W (Tc)
    Operating Temperature
    -55°C ~ 175°C (TJ)
    Mounting Type
    Supplier Device Package
    TO-263-7
    Package / Case

    Product Listing:

    FDB024N08BL7 – ON Semiconductor N-Channel MOSFET Power Electronics

    Features:
    • N-Channel Enhancement Mode MOSFET
    • Low On-State Resistance
    • Low Gate Charge
    • High Current Capability
    • Fast Switching
    • Avalanche Rated

    Specifications:
    • Drain-Source Voltage: VDSS = 24 V
    • Gate-Source Voltage: VGSS = ±20 V
    • On-State Resistance: RDS(on) = 0.0085 Ω (Typical)
    • Drain Current: ID = 8 A (Continuous)
    • Power Dissipation: Pd = 24.5 W
    • Operating Temperature Range: -55°C to +150°C
    • Packaging: TO-220


    Why buy from us >>> Fast / Safely / Conveniently
    • SKL is a Stock keeper and trade company of Electronic components .Our branches office include China, Hong Kong, Sigapore , Canada . Offer business, service, resourcing and information for our global member.
    • Goods are ensured the highest quality possible and are delivered to our customers all over the world with speed and precision.

    How to buy >>>
    • Contact us by email & sent your inquire with your Transport destination .
    • Online chat, the commissioner would be responded ASAP.

    Service >>>
    • Forwarder Shipment to world-wide, DHL ,TNT ,UPS,FEDEX etc. buyer don`t need to worry about shipping problem
    • We will try to respond as quickly as possible. But due to time zone difference, please allow up to 24 hours to get your mail replied. The products were tested by some devices or software, we ensure that there is no quality problems.
    • We are committed to providing fast, convenient and safe transportation service to global buyer.


    Quality Power MOSFET FDB024N08BL7 for High-Efficiency Power Electronics Applications  Single  N-Channel  PQFN8  120 V  4.0 m 11 for sale
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