| Sign In | Join Free | My burrillandco.com |
|
| Ask Lasest Price | |
| Brand Name : | Infineon |
| Model Number : | IRFSL5615PBF |
| Price : | Negotiable |
| Payment Terms : | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
| Supply Ability : | 999999 |
| Delivery Time : | 1-3 days |
IRFSL5615PBF MOSFET Power Electronics N-Channel 150 V Low RDSON Package TO-262
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 42mOhm @ 21A, 10V | |
Vgs(th) (Max) @ Id | 5V @ 100µA | |
Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1750 pF @ 50 V | |
FET Feature | - | |
Power Dissipation (Max) | 144W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | ||
Supplier Device Package | TO-262 | |
Package / Case |
Features
• Key Parameters Optimized for Class-D Audio
Amplifier Applications
• Low RDSON for Improved Efficiency
• Low QG and QSW for Better THD and Improved
Efficiency
• Low QRR for Better THD and Lower EMI
• 175°C Operating Junction Temperature for
Ruggedness
• Can Deliver up to 300W per Channel into 4Ω Load in
Half-Bridge Configuration Amplifier
Description
This Digital Audio MOSFET is specifically designed for Class-D
audio amplifier applications. This MOSFET utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. Furthermore, Gate charge, body-diode reverse recovery and
internal Gate resistance are optimized to improve key Class-D audio
amplifier performance factors such as efficiency, THD and EMI.
Additional features of this MOSFET are 175°C operating junction
temperature and repetitive avalanche capability. These features
combine to make this MOSFET a highly efficient, robust and reliable
device for ClassD audio amplifier applications.

|