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IRFSL5615PBF MOSFET Power Electronics N-Channel 150 V Low RDSON Package TO-262

    Buy cheap IRFSL5615PBF MOSFET Power Electronics N-Channel  150 V  Low RDSON  Package  TO-262 from wholesalers
     
    Buy cheap IRFSL5615PBF MOSFET Power Electronics N-Channel  150 V  Low RDSON  Package  TO-262 from wholesalers
    • Buy cheap IRFSL5615PBF MOSFET Power Electronics N-Channel  150 V  Low RDSON  Package  TO-262 from wholesalers

    IRFSL5615PBF MOSFET Power Electronics N-Channel 150 V Low RDSON Package TO-262

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    Brand Name : Infineon
    Model Number : IRFSL5615PBF
    Price : Negotiable
    Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 999999
    Delivery Time : 1-3 days
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    IRFSL5615PBF MOSFET Power Electronics N-Channel 150 V Low RDSON Package TO-262

    IRFSL5615PBF MOSFET Power Electronics N-Channel 150 V Low RDSON Package TO-262


    FET Type
    Technology
    MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss)
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    10V
    Rds On (Max) @ Id, Vgs
    42mOhm @ 21A, 10V
    Vgs(th) (Max) @ Id
    5V @ 100µA
    Gate Charge (Qg) (Max) @ Vgs
    40 nC @ 10 V
    Vgs (Max)
    ±20V
    Input Capacitance (Ciss) (Max) @ Vds
    1750 pF @ 50 V
    FET Feature
    -
    Power Dissipation (Max)
    144W (Tc)
    Operating Temperature
    -55°C ~ 175°C (TJ)
    Mounting Type
    Supplier Device Package
    TO-262
    Package / Case

    Features
    • Key Parameters Optimized for Class-D Audio
    Amplifier Applications
    • Low RDSON for Improved Efficiency
    • Low QG and QSW for Better THD and Improved


    Efficiency
    • Low QRR for Better THD and Lower EMI
    • 175°C Operating Junction Temperature for


    Ruggedness
    • Can Deliver up to 300W per Channel into 4Ω Load in
    Half-Bridge Configuration Amplifier


    Description
    This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications.


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