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| Brand Name : | Infineon |
| Model Number : | IRFR4105ZTRPBF |
| Price : | Negotiable |
| Payment Terms : | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
| Supply Ability : | 999999 |
| Delivery Time : | 1-3 days |
IRFR4105ZTRPBF MOSFET Power Electronics N-Channel Fast Switching Package TO-252
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 24.5mOhm @ 18A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 740 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 48W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | ||
Supplier Device Package | D-Pak | |
Package / Case |
Features:
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead
Description:
This HEXFET® Power MOSFET utilizes the latest processing techniques
to achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating
temperature, fast switching speed and improved repetitive avalanche
rating. These features combine to make this design an extremely
efficient and reliable device for use in a wide variety of
applications.

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