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FCD2250N80Z MOSFET Power Electronics TO-252AA Package N-Channel SuperFET® II MOSFET 800V 2.6A

    Buy cheap FCD2250N80Z MOSFET Power Electronics TO-252AA Package   N-Channel SuperFET® II MOSFET 800V 2.6A from wholesalers
     
    Buy cheap FCD2250N80Z MOSFET Power Electronics TO-252AA Package   N-Channel SuperFET® II MOSFET 800V 2.6A from wholesalers
    • Buy cheap FCD2250N80Z MOSFET Power Electronics TO-252AA Package   N-Channel SuperFET® II MOSFET 800V 2.6A from wholesalers

    FCD2250N80Z MOSFET Power Electronics TO-252AA Package N-Channel SuperFET® II MOSFET 800V 2.6A

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    Brand Name : onsemi
    Model Number : FCD2250N80Z
    Price : Negotiable
    Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 999999
    Delivery Time : 1 - 3 days
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    FCD2250N80Z MOSFET Power Electronics TO-252AA Package N-Channel SuperFET® II MOSFET 800V 2.6A

    FCD2250N80Z MOSFET Power Electronics

    TO-252AA Package N-Channel SuperFET® II MOSFET 800V 2.6A


    FET Type
    Technology
    MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss)
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    10V
    Rds On (Max) @ Id, Vgs
    2.25Ohm @ 1.3A, 10V
    Vgs(th) (Max) @ Id
    4.5V @ 260µA
    Gate Charge (Qg) (Max) @ Vgs
    14 nC @ 10 V
    Vgs (Max)
    ±20V
    Input Capacitance (Ciss) (Max) @ Vds
    585 pF @ 100 V
    FET Feature
    -
    Power Dissipation (Max)
    39W (Tc)
    Operating Temperature
    -55°C ~ 150°C (TJ)
    Mounting Type
    Supplier Device Package
    TO-252AA
    Package / Case

    Features


    • RDS(on) = 1.8 Typ.)
    • Ultra Low Gate Charge (Typ. Qg = 11 nC)
    • Low Eoss (Typ. 1.1 uJ @ 400V)
    • Low Effective Output Capacitance (Typ. Coss(eff.) = 51 pF)
    • 100% Avalanche Tested
    • RoHS Compliant
    • ESD Improved Capability Applications
    • AC - DC Power Supply • LED Lighting


    Description


    SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.



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