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FDMC610P MOSFET Power Electronics 8-PowerTDFN Package body diode reverse recovery performance P-Channel

    Buy cheap FDMC610P MOSFET Power Electronics  8-PowerTDFN Package body diode reverse recovery performance P-Channel from wholesalers
     
    Buy cheap FDMC610P MOSFET Power Electronics  8-PowerTDFN Package body diode reverse recovery performance P-Channel from wholesalers
    • Buy cheap FDMC610P MOSFET Power Electronics  8-PowerTDFN Package body diode reverse recovery performance P-Channel from wholesalers
    • Buy cheap FDMC610P MOSFET Power Electronics  8-PowerTDFN Package body diode reverse recovery performance P-Channel from wholesalers

    FDMC610P MOSFET Power Electronics 8-PowerTDFN Package body diode reverse recovery performance P-Channel

    Ask Lasest Price
    Brand Name : onsemi
    Model Number : FDMC610P
    Price : Negotiable
    Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 999999
    Delivery Time : 1 - 3 days
    • Product Details
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    FDMC610P MOSFET Power Electronics 8-PowerTDFN Package body diode reverse recovery performance P-Channel

    FDMC610P MOSFET Power Electronics

    8-PowerTDFN Package body diode reverse recovery performance P-Channel


    FET Type
    Technology
    MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss)
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    2.5V, 4.5V
    Rds On (Max) @ Id, Vgs
    3.9mOhm @ 22A, 4.5V
    Vgs(th) (Max) @ Id
    1V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs
    99 nC @ 4.5 V
    Vgs (Max)
    ±8V
    Input Capacitance (Ciss) (Max) @ Vds
    1250 pF @ 6 V
    FET Feature
    -
    Power Dissipation (Max)
    2.4W (Ta), 48W (Tc)
    Operating Temperature
    -55°C ~ 150°C (TJ)
    Mounting Type
    Supplier Device Package
    Power33

    Features


    Max rDS(on) = 3.9 mΩ at VGS = -4.5 V, ID = -22 A
    Max rDS(on) = 6.4 mΩ at VGS = -2.5 V, ID = -16 A
    State-of-the-art switching performance
    Lower output capacitance, gate resistance, and gate charge boost efficiency
    Shielded gate technology reduces switch node ringing and increases immunity to EMI and cross conduction RoHS Compliant


    General Description


    This P-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.


    Applications


    High side switching for high end computing
    High power density DC-DC synchronous buck converter


    Why buy from us >>> Fast / Safely / Conveniently



    • SKL is a Stock keeper and trade company of Electronic components .Our branches office include China, Hong Kong, Sigapore , Canada . Offer business, service, resourcing and information for our global member.
    • Goods are ensured the highest quality possible and are delivered to our customers all over the world with speed and precision.


    How to buy >>>



    • Contact us by email & sent your inquire with your Transport destination .
    • Online chat, the commissioner would be responded ASAP.


    Service >>>


    • Forwarder Shipment to world-wide, DHL ,TNT ,UPS,FEDEX etc. buyer don`t need to worry about shipping problem
    • We will try to respond as quickly as possible. But due to time zone difference, please allow up to 24 hours to get your mail replied. The products were tested by some devices or software, we ensure that there is no quality problems.
    • We are committed to providing fast, convenient and safe transportation service to global buyer.



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