NTR4170NT1G MOSFET Power Electronics TO-236-3 Transistor for High Current Switching Applications
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
The NTR4170NT1G is a P-channel enhancement mode Field-Effect Transistor (FET) designed for high-efficiency discrete and integrated load switching and low-side power management applications. It is housed in a compact TO-236-3 surface mount package with an industry standard pinout, allowing for easy drop-in replacement in existing designs.
The device utilizes a vertical DMOS structure with a high cell density for optimum performance and low on-resistance. It offers a low gate-charge and fast switching speeds for excellent circuit efficiency. The NTR4170NT1G is designed to operate with a wide range of gate drive voltages and is ideally suited for switching applications up to 30V. The device is RoHS compliant and 100% lead (Pb) free.
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