IRF6665TRPBF MOSFET Power Electronics
High-Performance Low-RDS(on) for Improved Efficiency
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | | |
Rds On (Max) @ Id, Vgs | | |
Vgs(th) (Max) @ Id | | |
Gate Charge (Qg) (Max) @ Vgs | | |
Vgs (Max) | | |
Input Capacitance (Ciss) (Max) @ Vds | | |
FET Feature | | |
Power Dissipation (Max) | | |
Operating Temperature | | |
Mounting Type | | |
Supplier Device Package | | |
Package / Case | |
Product Description:
The IRF6665TRPBF is a power MOSFET from IRF Technologies. This
N-Channel MOSFET is designed to handle up to 55 volts and has a low
on-resistance of 3.2 milliohms. The maximum drain current is 55
amps, while the maximum power dissipation is up to 740 watts. The
device is packaged in a TO-220AB package.
Product Parameters:
- Type: N-Channel MOSFET
- Voltage: 55V
- On-resistance: 3.2 milliohms
- Maximum Drain Current: 55 Amps
- Maximum Power Dissipation: 740 Watts
- Package: TO-220AB
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