NTJS3151PT1G MOSFET Power Electronics
The NTJS3151PT1G is a N-channel MOSFET power electronic device
designed for use in high efficiency power conversion circuits such
as DC/DC converters, motor drives, and other power management
applications. The device features a low on-state resistance of 0.38
ohms, a low reverse transfer capacitance of 0.7 pF, and a maximum
continuous drain current of 11.5 A. The device also features
excellent thermal performance with a maximum junction temperature
of 175°C and a maximum gate-source voltage of 20V. The device is
available in the industry standard TO-252 package.
Key Features:
• Low on-state resistance: 0.38 ohms
• Low reverse transfer capacitance: 0.7 pF
• Maximum continuous drain current: 11.5 A
• Maximum junction temperature: 175°C
• Maximum gate-source voltage: 20V
• Industry standard TO-252 package
Product Status | | |
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | | |
Rds On (Max) @ Id, Vgs | | |
Vgs(th) (Max) @ Id | | |
Gate Charge (Qg) (Max) @ Vgs | | |
Vgs (Max) | | |
Input Capacitance (Ciss) (Max) @ Vds | | |
FET Feature | | |
Power Dissipation (Max) | | |
Operating Temperature | | |
Mounting Type | | |
Supplier Device Package | | |
Package / Case | | |
Base Product Number | |
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