FDC640P MOSFET Power Electronics
The FDC640P is a power MOSFET device designed to provide efficient
and reliable power conversion in a wide range of applications. With
a maximum on-state resistance of 0.6 ohms, it is an ideal choice
for high-current switching applications. It also features a low
input capacitance that allows for fast switching speeds and
improved performance. This device is available in a
thermally-enhanced package, allowing for improved device
reliability and performance.
Features:
• Maximum on-state resistance: 0.6 ohms
• Maximum drain-source voltage: 60V
• Maximum gate threshold voltage: 4V
• Maximum drain current: 22A
• Maximum junction temperature: 150°C
• Low input capacitance: 2.4pF
• Thermally-enhanced package for improved device reliability and
performance
Product Status | | |
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | | |
Rds On (Max) @ Id, Vgs | | |
Vgs(th) (Max) @ Id | | |
Gate Charge (Qg) (Max) @ Vgs | | |
Vgs (Max) | | |
Input Capacitance (Ciss) (Max) @ Vds | | |
FET Feature | | |
Power Dissipation (Max) | | |
Operating Temperature | | |
Mounting Type | | |
Supplier Device Package | | |
Package / Case | | |
Base Product Number | |
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