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Common Power Mosfet SPD08P06PGBTMA1 8A 60V N Channel MOSFET field effect transistor

    Buy cheap Common Power Mosfet SPD08P06PGBTMA1 8A 60V N Channel MOSFET field effect transistor from wholesalers
     
    Buy cheap Common Power Mosfet SPD08P06PGBTMA1 8A 60V N Channel MOSFET field effect transistor from wholesalers
    • Buy cheap Common Power Mosfet SPD08P06PGBTMA1 8A 60V N Channel MOSFET field effect transistor from wholesalers

    Common Power Mosfet SPD08P06PGBTMA1 8A 60V N Channel MOSFET field effect transistor

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    Brand Name : Infineon Technologies
    Model Number : SPD08P06PGBTMA1
    Price : Negotiable
    Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 999999
    Delivery Time : 1-7days
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    Common Power Mosfet SPD08P06PGBTMA1 8A 60V N Channel MOSFET field effect transistor

    This listing is for a SPD08P06PGBTMA1 MOSFET Power Electronics. This MOSFET is a logic level N-channel enhancement mode power field-effect transistor and has the following parameters:


    Type: MOSFET Power Electronics
    Part Number: SPD08P06PGBTMA1
    Voltage: 8 V
    Current: 60 A
    Voltage Drop: 0.20 V
    Package Type: TO-220
    RDS(ON): 0.037 Ohms
    Pd: 6.75 W
    Configuration: Single
    Operating Temperature: -55°C to 175°C


    Product Status
    Active
    FET Type
    Technology
    MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss)
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    6.2V
    Rds On (Max) @ Id, Vgs
    300mOhm @ 10A, 6.2V
    Vgs(th) (Max) @ Id
    4V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs
    13 nC @ 10 V
    Vgs (Max)
    ±20V
    Input Capacitance (Ciss) (Max) @ Vds
    420 pF @ 25 V
    FET Feature
    -
    Power Dissipation (Max)
    42W (Tc)
    Operating Temperature
    -55°C ~ 175°C (TJ)
    Mounting Type
    Supplier Device Package
    PG-TO252-3
    Package / Case
    Base Product Number

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