IRFPG50PBF MOSFET Power Electronics
High Voltage and High Current for Maximum Efficiency
Product Description:
The IRFPG50PBF is a 600V N-Channel MOSFET transistor with a maximum drain current of 27A. It has an incredibly low gate-source capacitance, making it ideal for high frequency switching applications. It also has a low on-resistance of only 0.019 ohms, allowing for a high efficiency power transfer. Furthermore, this MOSFET has a low threshold voltage of 2.0V, allowing it to switch at low gate voltages.
Specifications:
- Drain-Source Voltage (Vdss) : 500V - Continuous Drain Current (Id) : 28A - Gate-Source Voltage (Vgs) : ±20V - Power Dissipation (Pd) : 111W - RDS(on) : 0.0065Ω - Input Capacitance (Ciss) : 1760pF - Output Capacitance (Coss) : 550pF
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