SI2347DS-T1-GE3 N-Channel
MOSFET Power Electronics Module for High Efficiency Applications
Product Features:
-Low RDS(ON)
-Low gate charge
-High drain-source breakdown voltage
-High efficiency
-Excellent thermal resistance
-High-speed switching
Product Specifications:
-VDSS: 30 V
-RDS(ON): 2.1 mΩ (max)
-Qg: 4.7 nC (max)
-VGS: ±20 V
-Input Capacitance (Ciss): 740 pF (typ)
-Power Dissipation (PD): 1.1 W (max)
-Operating Junction Temperature: 150°C (max)
-Package Type: TO-252-3
-Manufacturer: Vishay Siliconix
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