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FQD13N10LTM MOSFET Power Electronics TO-252-3 N-Channel Enhancement Mode Field Effect Transistor

    Buy cheap FQD13N10LTM MOSFET Power Electronics TO-252-3 N-Channel Enhancement Mode Field Effect Transistor from wholesalers
     
    Buy cheap FQD13N10LTM MOSFET Power Electronics TO-252-3 N-Channel Enhancement Mode Field Effect Transistor from wholesalers
    • Buy cheap FQD13N10LTM MOSFET Power Electronics TO-252-3 N-Channel Enhancement Mode Field Effect Transistor from wholesalers
    • Buy cheap FQD13N10LTM MOSFET Power Electronics TO-252-3 N-Channel Enhancement Mode Field Effect Transistor from wholesalers

    FQD13N10LTM MOSFET Power Electronics TO-252-3 N-Channel Enhancement Mode Field Effect Transistor

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    Brand Name : onsemi
    Model Number : FQD13N10LTM
    Price : Negotiable
    Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 999999
    Delivery Time : 1 - 3 days
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    FQD13N10LTM MOSFET Power Electronics TO-252-3 N-Channel Enhancement Mode Field Effect Transistor

    FQD13N10LTM MOSFET Power Electronics
    TO-252-3 N-Channel Enhancement Mode Field Effect Transistor

    FET Type
    Technology
    MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss)
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    5V, 10V
    Rds On (Max) @ Id, Vgs
    180mOhm @ 5A, 10V
    Vgs(th) (Max) @ Id
    2V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs
    12 nC @ 5 V
    Vgs (Max)
    ±20V
    Input Capacitance (Ciss) (Max) @ Vds
    520 pF @ 25 V
    FET Feature
    -
    Power Dissipation (Max)
    2.5W (Ta), 40W (Tc)
    Operating Temperature
    -55°C ~ 150°C (TJ)
    Mounting Type
    Supplier Device Package
    TO-252AA
    Package / Case

    The FQD13N10LTM is a N-Channel MOSFET manufactured by Fairchild Semiconductor. It is designed to be used in power supply, motor control and other switch mode applications. It features an industry-standard TO-252-3 package and a maximum drain current of 13A.


    The FQD13N10LTM has an on-state resistance of 0.01 ohms, a threshold voltage of 1.9V and a maximum drain-source voltage of 100V. It has excellent switching characteristics, allowing for minimal power dissipation and reduced switching noise. The FQD13N10LTM is a robust, reliable and cost effective solution for your power electronics applications.


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