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NVGS5120PT1G MOSFET Power Electronics N-Channel 100V 3.3A SOT-23-6 Package Low Gate Charge High Speed Switching

    Buy cheap NVGS5120PT1G MOSFET Power Electronics N-Channel 100V 3.3A SOT-23-6 Package Low Gate Charge High Speed Switching from wholesalers
     
    Buy cheap NVGS5120PT1G MOSFET Power Electronics N-Channel 100V 3.3A SOT-23-6 Package Low Gate Charge High Speed Switching from wholesalers
    • Buy cheap NVGS5120PT1G MOSFET Power Electronics N-Channel 100V 3.3A SOT-23-6 Package Low Gate Charge High Speed Switching from wholesalers
    • Buy cheap NVGS5120PT1G MOSFET Power Electronics N-Channel 100V 3.3A SOT-23-6 Package Low Gate Charge High Speed Switching from wholesalers

    NVGS5120PT1G MOSFET Power Electronics N-Channel 100V 3.3A SOT-23-6 Package Low Gate Charge High Speed Switching

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    Brand Name : onsemi
    Model Number : NVGS5120PT1G
    Price : Negotiable
    Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 999999
    Delivery Time : 1 - 3 days
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    NVGS5120PT1G MOSFET Power Electronics N-Channel 100V 3.3A SOT-23-6 Package Low Gate Charge High Speed Switching

    NVGS5120PT1G MOSFET Power Electronics
    N-Channel 100V 3.3A SOT-23-6 Package Low Gate Charge High Speed Switching

    FET Type
    Technology
    MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss)
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
    Rds On (Max) @ Id, Vgs
    111mOhm @ 2.9A, 10V
    Vgs(th) (Max) @ Id
    3V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs
    18.1 nC @ 10 V
    Vgs (Max)
    ±20V
    Input Capacitance (Ciss) (Max) @ Vds
    942 pF @ 30 V
    FET Feature
    -
    Power Dissipation (Max)
    600mW (Ta)
    Operating Temperature
    -55°C ~ 150°C (TJ)
    Mounting Type
    Supplier Device Package
    6-TSOP
    Package / Case



    The NVGS5120PT1G from ON Semiconductor is a N-channel enhancement mode MOSFET in SOT-23-6 package. This device features low on-resistance and is suitable for low voltage and low current applications. It has a maximum drain current of 1A and maximum drain-source voltage of 60V.


    This device provides fast switching, low gate charge and low threshold voltage for easy drive. It has a maximum power dissipation of 500mW and offers excellent thermal characteristics. This MOSFET is ideal for switching, DC/DC converters, battery protection, load switch, and level shifting applications.


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    Quality NVGS5120PT1G MOSFET Power Electronics N-Channel 100V 3.3A SOT-23-6 Package Low Gate Charge High Speed Switching for sale
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