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FDMA510PZ MOSFET Power Electronics 6-WDFN Voltage N-Channel Enhancement Mode Field Effect Transistor Automotive

    Buy cheap FDMA510PZ MOSFET Power Electronics 6-WDFN Voltage N-Channel Enhancement Mode Field Effect Transistor Automotive from wholesalers
     
    Buy cheap FDMA510PZ MOSFET Power Electronics 6-WDFN Voltage N-Channel Enhancement Mode Field Effect Transistor Automotive from wholesalers
    • Buy cheap FDMA510PZ MOSFET Power Electronics 6-WDFN Voltage N-Channel Enhancement Mode Field Effect Transistor Automotive from wholesalers
    • Buy cheap FDMA510PZ MOSFET Power Electronics 6-WDFN Voltage N-Channel Enhancement Mode Field Effect Transistor Automotive from wholesalers

    FDMA510PZ MOSFET Power Electronics 6-WDFN Voltage N-Channel Enhancement Mode Field Effect Transistor Automotive

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    Brand Name : onsemi
    Model Number : FDMA510PZ
    Price : Negotiable
    Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 999999
    Delivery Time : 1 - 3 days
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    FDMA510PZ MOSFET Power Electronics 6-WDFN Voltage N-Channel Enhancement Mode Field Effect Transistor Automotive

    FDMA510PZ MOSFET Power Electronics
    6-WDFN Voltage N-Channel Enhancement Mode Field Effect Transistor Automotive

    FET Type
    Technology
    MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss)
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    1.5V, 4.5V
    Rds On (Max) @ Id, Vgs
    30mOhm @ 7.8A, 4.5V
    Vgs(th) (Max) @ Id
    1.5V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs
    27 nC @ 4.5 V
    Vgs (Max)
    ±8V
    Input Capacitance (Ciss) (Max) @ Vds
    1480 pF @ 10 V
    FET Feature
    -
    Power Dissipation (Max)
    2.4W (Ta)
    Operating Temperature
    -55°C ~ 150°C (TJ)
    Mounting Type
    Supplier Device Package
    6-MicroFET (2x2)
    Package / Case

    The FDMA510PZ is a 6-WDFN package Power MOSFET from Fairchild Semiconductor. It is designed to deliver low resistance and high current capabilities. This device features a logic level gate threshold voltage of 1.8V and a drain-source breakdown voltage of 40V. It has a continuous drain current of 18A and a maximum pulsed drain current of 60A.


    The maximum avalanche energy is 4mJ and the maximum power dissipation is 4W. This device is RoHS compliant and has a maximum junction temperature of 175°C. It is suitable for use in high power DC-DC converters, motor control systems, and other high current, high voltage applications.


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