NTR1P02T1G MOSFET Power Electronics TO-236-3 SOT-23 Single N-Channel Transistor Module
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
NTR1P02T1G is a low-voltage N-Channel enhancement mode MOSFET Power Electronics device from ON Semiconductor. It is encapsulated in a TO-236-3 (SOT-23-3) package. This device is designed to handle a maximum drain-source voltage of 40V and a maximum drain current of 1A. It is suitable for a wide range of applications such as power management, motor control, and switching power sources.
Its high switching speed, low gate charge, and low on-resistance make it an ideal choice for high-efficiency power conversion. This device is RoHS compliant and AEC-Q101 qualified. It offers superior temperature and voltage performance over other devices in its class.
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