FDA38N30 MOSFET Power Electronics
TO-3P-3 N-Channel 30V 38A 1.7Ohm High Performance Transistor
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
FDA38N30 is a N-Channel Power MOSFET with a TO-3P-3 package. It features excellent switching performance, low on-state resistance, and low gate charge. The device is ideal for switching applications, such as AC/DC converters, power supplies, and power switching circuits. It offers an improved avalanche energy rating for improved robustness. The device has a drain-source breakdown voltage of 800 V, an on-state resistance of 0.38 Ω, and a maximum drain current of 30 A.
The gate-source threshold voltage is 4.5 V and the gate-source maximum voltage is +/-20 V. It has a maximum junction temperature of 175 °C, and a maximum junction-to-ambient thermal resistance of 25 °C/W. The device is RoHS compliant and halogen free.
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