NTMFS4C03NT1G MOSFET Power Electronics
4A Ultra Low On Resistance Gate Charge AECQ101 Qualified Single
N-Channel
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | | |
Rds On (Max) @ Id, Vgs | | |
Vgs(th) (Max) @ Id | | |
Gate Charge (Qg) (Max) @ Vgs | | |
Vgs (Max) | | |
Input Capacitance (Ciss) (Max) @ Vds | | |
FET Feature | | |
Power Dissipation (Max) | | |
Operating Temperature | | |
Mounting Type | | |
Supplier Device Package | | |
Package / Case | |
The NTMFS4C03NT1G is a PowerTDFN 8-Pin Package N-Channel 20V (D-S)
MOSFET from ON Semiconductor. It is designed for low voltage
applications that require high speed switching and low
on-resistance. This device features low gate charge and low
drain-source on-state resistance. It is ideal for applications such
as DC-DC converters, battery powered systems and other switching
applications.
The NTMFS4C03NT1G is a logic-level MOSFET that provides superior
switching performance in low voltage applications. It offers a low
RDS(on) of 0.0085Ω and an input capacitance of 13.4pF. This device
is RoHS compliant and is also specified for operation over an
extended temperature range of -55°C to +150°C.
The NTMFS4C03NT1G is an ideal solution for DC to DC converters,
battery powered systems, and other switching applications that
require low voltage and fast switching. It features a low gate
charge, low drain-source on-state resistance, and is RoHS
compliant. This device is specified for operation over an extended
temperature range of -55°C to +150°C.
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